IRL1404S ,40V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRL1404ZS ,40V Single N-Channel HEXFET Power MOSFET in a D2Pak packageapplications.IRL1404Z IRL1404ZS IRL1404ZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C 2 ..
IRL2203N ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalresistance and l ..
IRL2203NPBF ,30V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91366IRL2203N®HEXFET Power MOSFETl Advanced Process TechnologyDV = 30Vl Ultra Low On-Resistanc ..
IRL2203NS ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable of accommodatingdie sizes up to HE ..
IRL2203NSTRL ,30V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsSymbol Parameter Max Units
IRL1404S
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 93854A
IRL1404S
|RL1404L
International
TOR Rectifier
o Advanced Process Technology HEXFET© Power MOSFET
. Ultra Low On-Resistance
. Dynamic dv/dt Rating D -
o 175°C Operating Temperature Vross - 40V
. Fast Switching
. Fully Avalanche Rated ' FN, RDS(on) = 00049
Description
Seventh Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing S
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
ID = 160A©
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of D2Pak TO-262
its low internal connection resistance and can dissipate up IRL1404S IRL1404L
to 2.0W in a typical surface mount application.
The through-hole version (IRL1404L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 160©
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 1106) A
IDM Pulsed Drain Current co 640
Po @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Vss Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 520 mJ
IAR Avalanche CurrentCD 95 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
Rox: Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - "C/W
RGJA Junction-to-Ambient (PCB Mounted)© - 40
1
02/22/02
IRL1404S/lRL1404L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V N/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.038 - V/°C Reference to 25°C, D = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.004 Q VGs = 10V, ID = 95A ©
3.0059 VGS = 4.3V, ID = 40A GD
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V Vos = Vss, ID = 250PA
gfs Forward Transconductance 93 - - S VDs = 25V, ID = 95A
loss Drain-to-Source Leakage Current - - 20 HA Vros = 40V, VGS = 0V
- - 250 Vos = 32V, Was = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
% Total Gate Charge - - 140 ID = 95A
Qus Gate-to-Source Charge - - 48 nC VDs = 32V
di Gate-to-Drain ("Miller") Charge - - 60 N/ss = 5.0V, See Fig. 6 ©
tam) Turn-On Delay Time - 18 - ns VDD = 20V
tr Rise Time - 270 - ID = 95A
td(ott) Turn-Off Delay Time - 38 - RG = 2.59 VGS = 4.5V
tr Fall Time - 130 - Ro = 0.259 (D
u, Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package GE )
and center of die contact s
Ciss Input Capacitance - 6600 - VGS = 0V
Coss Output Capacitance - 1700 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 350 - f = 1.0MHz, See Fig. 5
Cass Output Capacitance - 6700 - N/ss = 0V, Vros = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1500 - N/ss = 0V, Vros = 32V, f = 1.0MHz
Cass eff. Effective Output Capacitance © - 1500 - VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 160© A showing the
ISM Pulsed Source Current - - 640 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, ls = 95A, VGS = 0V ©
tn Reverse Recovery Time - 63 94 ns To = 25°C, IF = 95A
Qrr Reverse RecoveryCharge - 170 250 nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
