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IRL1404
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 93854A
International
TOR Rectifier IRL'1404
HEXFET© Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance VDSS = 40V
Dynamic dv/dt Rating
175°C Operating Temperature . A RDSM) = 4.0mn
Fast Switching G
Fully Avalanche Rated ID = 160A©
Description
Seventh Generation HEXFETQ power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The
low thermal resistance and low package cost of the TO-220 contribute to TO-220AB
its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 160©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 110© A
IDM Pulsed Drain Current (D 640
PD @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/“C
VGS Gate-to-Source Voltage , 20 V
EAs Single Pulse Avalanche Energy© 620 mJ
IAR Avalanche Current0) 95 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RNA Junction-to-Ambient (PCB Mounted)© - 62
1
07/22/02
RL1404
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, ID = 250pA
AWsooss/1To Breakdown Voltage Temp. Coemcient - 0.038 - V/°C Reference to 25''C, ID = 1mA
RDSWO Static Drain-to-Source On-Resistance - - 4.0 mn VGS = 10V, ID = 95A (i)
- - 5.9 I/tss = 4.3V, ID = 40A (9
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V VDs = I/ss, ID = 250pA
gts Forward Transconductance 93 - - S VDs = 25V, ID = 95A
bss Drain-to-Source Leakage Current - - 20 pA Vos = 40V, VGS = 0V
- - 250 Ws = 32V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 200 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
09 Total Gate Charge - - 140 ID = 95A
Cas Gate-to-Source Charge - - 48 nC Vos = 32V
di Gate-to-Drain ("Miller") Charge - - 60 V35 = 5.0V, See Fig. 6 ©
tdwn) Turn-On Delay Time - 18 - ns VDD = 20V
t, Rise Time - 270 - ID = 95A
td(ott) Turn-Off Delay Time - 38 - Rs = 2.59 VGS = 4.5V
tf Fall Time - 37 - RD = 0.259 ©
u, Internal Drain Inductance - 4.5 - nH Between Isad, D
6mm (0.25in.)
LS Internal Source Inductance - 7.5 - from package SQ )
and center of die contact s
Ciss Input Capacitance - 6590 - Ves = 0V
Cass Output Capacitance - 1710 - pF N/os = 25V
Crss Reverse Transfer Capacitance - 350 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 6650 - Veg = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 1510 - VGs = 0V, Vos = 32V, f = 1.0MHz
Coss eff. Effective Output Capacitance s - 1480 - Vss = 0V, Vos = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D
(Body Diode) - - 160© A showing the
ISM Pulsed Source Current _ _ 640 integral reverse G
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 95A, VGs = 0V (9
trr Reverse Recovery Time - 63 94 ns To = 25°C, IF = 95A
Qrr Reverse RecoveryCharge - 170 250 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L3+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11).
© Starting To = 25''C, L = 0.35mH
Rs = 259, IAS = 95A. (See Figure 12).
© Iso f 95A, di/dt S 160/Ups, VDD S V(BR)DSSI
T J s: 175°C.
co Pulse width s: 300ps; duty cycle 3 2%.
© Coss eff. is a foted capacitance that gives the same charging time
as Coss while I/ns is rising from 0 to 80% V933
© Calculated continuous current based on maximum allowable
junction temperature; for recommended current-handing of the
package refer to Design Tip # 93-4.
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
