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IRL1104SPBF
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
:raRliuctifier
Logic-Level Gate Drive
Advanced Process Technology
Surface Mount (IRL1104S)
Low-profilethrough-hole(lRL1104L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
q Lead-Free
Description
Fifth Generation HEXFETs from International Rectifierutilize
advanced processing techniques to achieve extremely low
on-resistance persilicon area. This beneht, combined with
the fast switching speed and ruggedized device design that
HEXFET PowerMOSFETs arewell known for, provides the
designerwith an extremely efficient and reliable device for
use in a wide variety ofapplications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0W
inatypical surface mountapplication.
The through-hole version (IRL1104L) is available for low-
profile applications.
Absolute Maximum Ratings
PD -95576
|RL1104SPbF
|RL1104LPbF
HEXFET® Power MOSFET
D VDSS = 40V
RDS(on) = 0.008Q
ID = 104A©
D 2 Pak TO-262
Parameter
k, @ TC = 25°C
Continuous Drain Current, VGS @ 10V©
ID @ Tc = 100°C
Continuous Drain Current, VGS @ 1OV©
Pulsed Drain Current (D6)
PD @TA = 25''C
Power Dissipation
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
1.1 W/t
Gate-to-Source Voltage
Single Pulse Avalanche Energy©©
340 mJ
Avalanche Current0)
Repetitive Avalanche Energy©
Peak Diode Recovery dv/dt ©S
5.0 V/ns
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Res
istance
Parameter
Typ. Max. Units
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)**
- 40 CA/V
07/1 9/04
|RL1104S/LPbF
International
TOR Rectifier
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGs = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.04 - V/°C Reference to 25°C, ID =1mA©
. . . - - 0.008 VGs = 10v, ID = 62A ©
Roam) Static Drain-to-Source On-Resistance _ - 0.012 W VGS = 4.5V, ID = 52A ©
VGS(th) Gate Threshold Voltage 1.0 - V Vos = VGs, ID = 250PA
gfs Forward Transconductance 53 - - S Vros = 25V, ID = 62A©
. - - 25 VDS =40V, l/ss = 0V
loss Drain-to-Source Leakage Current - - 250 HA Vos = 32V, VGS = 0V, To = 150°C
Gate-to-Source Forward Leakage - - 100 VGs= 16V
less Gate-to-Source Reverse Leakage - - -100 nA VGS = -16V
% Total Gate Charge - - 68 lo =62A
Qgs Gate-to-Source Charge - - 24 nC VDs = 32V
di Gate-to-Drain ("Miller") Charge - - 34 VGS = 4.5V, See Fig. 6 and 13 ©©
tam”) Turn-On Delay Time - 18 - VDD = 20V
tr Rise Time - 257 - ID =54A
td(oti) Turn-Off Delay Time - 32 - Rs = 3.69 , VGS = 4.5V
tf Fall Time - 64 - RD = 0.49, See Fig. 10 ©S
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 3445 - VGs = 0V
Coss Output Capacitance - 1065 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 104© A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) O) - - 416 p-njunction diode. S
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, ls =62A, I/ss = 0V ©
trr Reverse Recovery Time - 84 126 ns TJ = 25°C, IF =62A
er Reverse Recovery Charge - 223 335 nC di/dt = 100/Ups C90D
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 15V, starting TJ = 25°C, L = 0.18mH
Rs = 259,
IAS = 62A. (See Figure 12)
© ISD 3 62A, di/dt g 217A/ps, VDD s V(BR)DSS,
TJs175°c
© Pulse width s 300ps; duty cycle s: 2%.
s Uses IRL1104 data and test conditions.
© Calculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip ' 93-4
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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