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IRL1004S
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 91644A
. . IRL1004S
Tart, Rectifier IRL1004L
0 Advanced Process Technology
o Ultra Low On-Resistance D
0 Dynamic dv/dt Rating Vross = 40V
0 175°C Operating Temperature
0 FastSwitching . RDS(on) = 0.0065Q
0 Fully Avalanche Rated
Description ID = 130A©
Fifth Generation HEXFET® power MOSFETs from S
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide
variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D2Pak TO-262
D2Pak is suitable for high current applications because of IRL1004S IRL1004L
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRL1004L) is available for low-
prohle application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, l/ss @ 10V© 130 s
ID @ Tc = 100°C Continuous Drain Current, VGS © 10V© 92 S A
IDM Pulsed Drain Current ©© 520
PD @TA = 25°C Power Dissipation 3.8 W
Po @Tc = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
Ves Gate-to-Source Voltage * 16 V
EAs Single Pulse Avalanche Energy© 700 mJ
IAR Avalanche Current0) 78 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.75 a
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)' - 40 C/W
1
12/29/99
IRL1004S/1004L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)oss Drain-to-Source Breakdown Voltage 40 - - V I/ss = 0V, ID = 250pA
AV(BR)DS$/ATJ Breakdown Voltage Temp. Coemcient - 0.04 - V/°C Reference to 25°C, lo = 1mA
RDs(on) Static Drain-to-Source On-Resistance _- _- %000695 Q x2: : 49;},ID==7:5’:%
Vegan) Gate Threshold Voltage 1.0 - V I/rss = Was, ID = 250pA
9ts Forward Transconductance 63 - - S Vos = 25V, ID = 78A©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 40V, VGS = 0V
- - 250 Vos = 32V, VGs = 0V, TJ = 150°C
Gate-to-Source Forward Leakage - - 100 n A VGs = 16V
IGSS Gate-to-Source Reverse Leakage - - -100 VGS = -16V
% Total Gate Charge - - 100 ID = 78A
Qgs Gate-to-Source Charge - - 32 nC VDS = 32V
di Gate-to-Drain ("Miller") Charge - - 43 VGS = 4.5V, See Fig. 6 and 13 ©©
tum) Turn-On Delay Time - 16 - VDD = 20V,
tr Rise Time - 210 - ID = 78A,
tum) Turn-Off Delay Time - 25 - ns Rs = 2.59,
tf Fall Time - 14 - RD = 0.189, See Fig. 10 ©©
LS Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 5330 - VGS = 0V
Coss Output Capacitance - 1480 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 5©©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 130S MOSFET symbol D
(Body Diode)© A showing the
ISM Pulsed Source Current - - 520 integral reverse G
(Body Diode) (OO) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25''C, Is = 78A, VGS = OV(ii)
trr Reverse Recovery Time - 78 120 ns To = 25°C, IF = 78A
Q,, Reverse RecoveryCharge - 180 270 nC di/dt = 100Alps@©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by (io Pulse width s: 300ps; duty cycle 3 2%.
max. junction temperature. (See fig. 11) . .
. 0 © Calculated continuous current based on maXImum allowable
© Staitlng To = ' C, L = 0.23mH junction temperature; for recommended current-handing of the
RG - 25f2, '23 - 78A. (See Figure 12) package refer to Design Tip # 93-4
© Iso S 78A, di/dt S 370A/ps, VDDS V(BR)DSS’ © Uses IRL1004 data and test conditions
Tus 175°C
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
