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IRL1004
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:rartR3ctifier
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
q Fully Avalanche Rated
Description
Fifth Generation HEXFET© power MOSFETs from
International Rectifier utilize advanced processing techniques
to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized devioedesignthatHEXFETpowerMOSFETs
are well known for, provides the designerwith an extremely
ethcient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation levels
to approximately 50 watts. The lowthermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
PD - 91702B
|RL1004
HEXFET© Power MOSFET
D Vross = 40V
" RDS(on) = 0.00659
ID = 130AS
TO-220AB
Parameter
Max. Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, Vss @ 10V
Pulsed Drain Current (D
Po @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy©
Avalanche Current©
Repetitive Avalanche Energyc0
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew
IO lbf-in (1.1N-m)
Thermal Res
istance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
11/29/99
IRL1004
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V VGS = 0V, lo = 250pA
AVmRyoss/ATo Breakdown Voltage Temp. Coefficient - 0.04 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance _- _- (30(5):: n [/:,C14.0i//'d,==7d/)d4),
VGS(th) Gate Threshold Voltage 1.0 - - V I/rss = Kas, ID = 250PA
git Forward Transconductance 63 - - S Vos = 25V, ID = 78A
bss Drain-to-Source Leakage Current _- _- 22550 PA x: , :2x 1:: C, If TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 16V
Gate-to-Source Reverse Leakage - - -100 VGS = -16V
% Total Gate Charge - - 100 ID = 78A
ths Gate-to-Source Charge - - 32 nC VDs = 32V
di Gate-to-Drain ("Miller") Charge - - 43 V95 = 4.5V, See Fig. 6 and 13 ©
Mon) Turn-On Delay Time - 16 - VDD = 20V
tr Rise Time - 210 - ns ID = 78A
td(off) Turn-Off Delay Time - 25 - Rs = 2.59, VGs = 4.5V
tf Fall Time - 14 - RD = 0.189, See Fig. 10 ©
. Between lead, D
LD Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G _
and center of die contact s
Ciss Input Capacitance - 5330 - Vss = 0V
CDSS Output Capacitance - 1480 - pF I/rss = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 1306) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 520 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 78A, VGS = 0V (ir)
trr Reverse Recovery Time - 78 120 ns To = 25°C, IF = 78A
Qrr Reverse Recovery Charge - 180 270 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
C) Starting TJ = 25°C, L =0.23mH
Rs = 259, lAs = 78A. (See Figure 12)
© ISD S78A, di/dt f 370A/ps, VDD S V(BR)ross,
TJs 175°C
© Pulse width s: 300ps; duty cycle 5 2%
6) Calculated continuous current based on maximum allowable
junction temperature; tor recommended current-handling of the
package refer to Design Tip #93-4
