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IRKU56/12A-IRKV56/12A
400V 45A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
International
IEBR Rectifier
Bulletin 127134 reV.E 10/02
|RKUN41, 56 SERIES
THYRISTOR] THYRISTOR
Features
ll High Voltage
II Industrial Standard Package
ll Thick AI metal die and double stick bonding
ll Thick copper baseplate
" UL E78996 approved
ll 3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side ofthe device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
ADD-A-pakTM GEN V Power Modules
Benefits
I: Up to 1600V
El Full compatible TO-240AA
[I High Surge capability 45 A
tl Easy Mounting on heatsink
l1 Al203 DBCinsulator 60 A
ll Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Parameters |RKUN41 |RKUN56 Units
1W) @ 85''C 45 60 A
INRMS) 70 95 A
ITSM @ 50Hz 850 1310 A
@ 60Hz 890 1370 A
121 @ 50Hz 3.61 8.50 KA2s
@ 60Hz 3.30 7.82 KA2s
Pvt 36.1 85.0 KA2ps
VRRM range 400to 1600 V
TSTG -40to 125 “C
T, - 40to125 ''C
|RKUN41, 56 Series
Bulletin 127134 rev.E 10/02
International
152R Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , me.ximum VRSM, maximum VDRM , max. repetitive |RRM
T b Voltage repetitive non-repetitive peak off-state voltage, IDRM
ype num er Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
IRKUN41, 56 08 800 900 800 15
12 1200 1300 1200
16 1600 1700 1600
On-state Conduction
Parameters IRKUN41 IRKUN56 Units Conditions
In”) Max. average on-state 45 60 180° conduction, half sine wave,
current A Tc= 85°C
INRMS) Max. RMSon-state 7O 95 DC
current @ TC 82 80 ''C
|TSM Max. peak, one cycle 850 1310 t=10ms No voltage Sinusoidal
non-repetitive on-state 890 1370 t=8.3ms reapplied half wave
current 715 1100 A t=10ms 100% VRRM Initial Tr-T, max.
750 1150 t=8.3ms reapplied
940 1450 t=10ms T J=25°C,
985 1520 t=8.3ms no voltage reapplied
Izt Max. I2tforfusing 3.61 8.56 t=10ms No voltage
3.30 7.82 t=8.3ms reapplied . .
- a Initial TJ = TJ max.
2.56 6.05 KA2s t=10ms 100 AVRRM
2.33 5.53 t=8.3ms reapplied
4.42 10.05 t=10ms TJ=25°C,
4.03 9.60 t=8.3ms no voltage reapplied
Wt Max. PVttortusing (1) 36.1 85.6 KANs t=0.1 to 10ms, no voltage reapplied
V Max. value ofthreshold 0.88 0.85 Low level (3) -
T(TO) V . T J - T J max
voltage(2) 0.91 0.88 Highlevel (4)
r Max. value of on-state 5.90 3.53 Low level (3)
t mn T J = T J max
sloperesistance(2) 5.74 3.41 Highlevel (4)
V Max. peak on-state I = nxl
TM TM T A
1.81 1.54 v - ( V) T = 25''C
voltage lFM-NXIHAV) J
dildt Max. non-repetitive rate T J = 25°C, from 0.67 VDRM,
of rise of turned on 150 Alps ITS, =1: x IWW), I9 = 500mA,
current tr< 0.5 ps.tp>Gus
lr, Max. holding current 200 T J = 25°C, anode supply = 6V,
mA resistive load, gate open circuit
IL Max. latching current 400 T J = 25°C, anode supply=6V,resistive load
2 . _ 2 - 2
(1) I tfortime tx - I " x l. (2) Average power - VT1T0) x IT(AV)+ 'tX (IT(RMS))
(3) 16.7yoxrtxlAv
(4)|>1tx|AV
