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IRKH71-08-IRKH91/06-IRKH91/12-IRKH91/16A-IRKH91-06-IRKH91-08-IRKH91-12-IRKL91-04-IRKL91-16-IRKT71/12-IRKT71-12-IRKT91/08-IRKT91/12-IRKT91-06-IRKT91-08-IRKT91-12
400V 75A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
International
TGiR Rectifier |RK.71, .91 SERIES
THYRISTORI DIODE and ADD-A-pak" GEN V Power Modules
THYRISTORI THYRISTOR
Features Benefits
ll High Voltage I! Up to 1600V
ll Industrial Standard Package ll Full compatible TO-24OAA 75 A
I] Thick Al metal die and double stick bonding El High Surge capability
" Thick copper baseplate tl Easy Mounting on heatsink 95 A
ll UL E78996 approved ll AI203 DBC insulator
ll 3500VRMS isolating voltage ll Heatsink grounded
Mechanical Description
The Generation V of Add-A-pak module combine the The electricalterminals are secured againstaxial pull-out:
excellentthermal performance obtained by the usage they are fixed to the module housing via a click-stop
of Direct Bonded Copper substrate with superior feature already tested and proved as reliable on other IR
mechanical ruggedness, thanks to the insertion of a modules.
solid Copper baseplate atthe bottom side ofthe device.
The Cu baseplate allow an easier mounting on the
majority of heatsinkwith increased tolerance ofsurface Electrical Description
roughness and improve thermal spread. These modules are intended for general purpose high
The Generation V of AAP module is manufactured voltage applications such as high voltageregulated power
without hard mold, eliminating in this way any possible supplies, lighting circuits, temperature and motor speed
direct stress on the leads. control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters IRK.71 IRK.91 Units
|T(AV)0r |F(AV) 75 95 A
100%) (*) 165 210 A
ITSM @50Hz 1665 1785
IFSM @60Hz 1740 1870 A
121 @50Hz 13.86 15.91 KA2s
@60Hz 12.56 14.52 KA2s '
|2\/t 138.6 159.1 KA2\/s
VRRM range 400to 1600 V
TSTG - 40 to 125 °C
T: -40tol25 oC
(*) As AC switch.
1
IRK.71, .91 Series International
Bulletin 127132 rev.H 10/02 TOR Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , mjeimum VRSM, maxin1um VDRM , max. repetitive |RRM
T b Voltage repetitive non-repetitive peak off-state voltage, |DRM
ype num er Code peak reverse voltage peak reverse voltage gate open circuit 125°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.71/ .91 10 1000 1100 1000 15
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters IRK.71 IRK.91 Units Conditions
ITW) Max. average on-state
current (Thyristors) 75 95 180° conduction, halfsine wave,
'F1AV) Max. average fonNard Tc--85''C
current (Diodes)
I Max. continuous RMS
O(RMS) on-state current. 165 210 I-CCI-r; or cs-CCI-co
As AC switch A I(RMS) I(RMS)
|TSM Max. peak, one cycle 1665 1785 t=10ms No voltage
. . . Sinusoidal
or non-repetitive on-state 1740 1870 t=8.3ms reapplied
I forward current 1400 1500 t=10ms 100"/ V half wave,
FSM or Q RRM InitiaITJ=TJmax.
1470 1570 t=8.3ms reapplied
1850 2000 t=10ms TJ=25°C,
1940 2100 t=8.3ms no voltage reapplied
Pt Max. Pt for fusing 13.86 15.91 t=10ms No voltage
12.56 14.52 t=8.3ms reapplied Initial T, = T, max.
9.80 11.25 KA2 t=10ms 100%VRRM
8.96 10.27 t=8.3ms reapplied
17.11 20.00 t=10ms TJ=25°C,
15.60 18.30 t= 8.3ms no voltage reapplied
_ Max. _ for fusing (1) 138.6 159.1 KAles t=0.1 to 10ms, no voltagereapplied
Vmo) Max. value of threshold 0.82 0.80 V Lowlevel (3) T, = To max
voltage(2) 0.85 0.85 Highlevel (4)
r Max. value of on-state 3.00 2.40 Low level (3)
t mn T J = T J max
slope resistance(2) 2.90 2.25 Highlevel (4)
V Max. peak on-state or 'TM="X'TA 0
TM 1.59 1.58 v I - I‘V’ TJ=25C
IG, forward voltage Fu-v" F(AV)
di/dt Max. non-repetitive rate T J = 25°C, from 0.67 VDRM,
of rise of turned on 150 Alps ITM =1: x IWM, IQ = 500mA,
current tr< 0.5 us,tp>6ps
Ir, Max. holding current 200 T, = 25°C, anode supply = 6V,
mA resistive load, gate open circuit
IL Max. latching current 400 T J=25°C,anode supply=6V, resistive load
(1) fl for time t, = IZVt x Vt,, (2) Average power = v1.0.0) x IT(AV) + rtx (IT(RMS))2 (3) 16.7% x It x IAV < I < It x IAV
(4)|>1:xlAV
2
