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IRKH105/08
400V 105A Doubler Circuit Positive Phase Control Thyristor/Diode in a ADD-A-Pak package
International
152R Rectifier
Bulletin 127133 rev.H 10102
IRKA05 SERIES
THYRISTORI DIODE and
THYRISTORI THYRISTOR
Features
ll High Voltage
ll Industrial Standard Package
" Thick Al metal die and double stick bonding
ll Thick copper baseplate
ll UL E78996 approved
[1 3500VRMS isolating voltage
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copperbaseplate at the bottom side ofthe device.
The Cu baseplate allow an easier mounting on the
majority ofheatsink with increased tolerance ofsurface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
ADD-A-pak'" GEN V Power Modules
Benefits
ll Up to 1600V
ll Full compatible TO-240AA 1 05 A
ll High Surge capability
ll Easy Mounting on heatsink
II AIZO3 DBC insulator
II Heatsink grounded
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Parameters IRK.105 Units
|T(AV)or |F(AV) 105 A
© 85''C
lows) (*) 235
ITSM @50Hz 1785
IFSM @60Hz 1870 A
121 @50Hz 15.91 KA2s
© 60Hzl 14.52 KA2s
" 159.1 KA2/s
vRRM range 400 to 1600 v
TSTG - 40 to 150 ''C
TJ -40to130 ''C
C) As AC switch.
|RK.105 Series
Bulletin 127133 rev.H 10/02
International
IOR Rectifier
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum VRSM, maximum VDRM , max. repetitive IRRM
T n mb r Voltage repetitive non-repetitive peak off-state voltage, IDRM
ype u e Code peak reverse voltage peak reverse voltage gate open circuit 130°C
- V V V mA
04 400 500 400
06 600 700 600
08 800 900 800
IRK.105 10 1000 1100 1000 20
12 1200 1300 1200
14 1400 1500 1400
16 1600 1700 1600
On-state Conduction
Parameters |RK.105 Units Conditions
IWM Max. average on-state
current (Thyristors) 105 18tP conduction, half sine wave,
IHAV) Max. average forward TC=85°C
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current. 235 or
As AC switch A I(RMS) < I(RMS)
ITSM Max. peak, one cycle 1785 t=10ms No voltage Sinusoidal
or non-repetitive on-state 1870 t=8.3ms reapplied half wave,
G, or forward current 1500 t=10ms 100%VRRM Initial TJ=TJ max.
1570 t=8.3ms reapplied
2000 t=10ms TJ=25°C,
2100 t=8.3ms no voltage reapplied
lzt Max. fl for fusing 15.91 t=10ms No voltage
14.52 t=8.3ms reapplied Initial Tr-T., max.
11.25 2 t=10ms 100%VRRM
10.27 t=8.3ms reapplied
20.00 t=10ms TJ=25°C,
18.30 t=8.3ms no voltage reapplied
_ Max. |2\lt for fusing (1) 159.1 KA2is t=0.1to10ms,no voltage reappl.TJ=TJmax
v, TO Max. value of threshold 0.80 Lowlevel (3)
( ) V . T = T max
voltage (2) 0.85 High level (4) J J
r Max. value ofon-state 2.37 Low level (3)
t . mn . T J = T J max
slope resistance (2) 2.25 Highlevel (4)
VTM Max. peak on-state or ITM=pxlT(AV)
1.64 V I - I T J = 25°C
VFM forward voltage Fu=px F(AV)
di/dt Max. non-repetitive rate T., = 25°C, from 0.67 VDRM,
of rise of turned on 150 Alps Ir,, =p x IUAW lg =500mA,
current t,<0.5 ps,tp>6ps
IH Max. holding current 200 T, = 25°C, anode supply = 6V,
mA resistive load, gate open circuit
t Max. latching current 400 T J=25°C.anode supply=6V,resistive load
(1) I21 fortime t, = |th x A, (2) Average power = VT(TO) x |T(AV) + rtx (IHRMSQ2 (3) 16.7% x p x |AV< I < p x IAV
(4)|>px|AV
