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IRHM7250
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
International
19R Rectifier
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 90674C
IRHM725O
JANSR2N7269
200V, N-CHANNEL
REF: MlL-PRF-1 9500/603
RAD Hard' HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) Ito QPL Part Number . ‘51-
IRHM7250 100K Rads (Si) 0.100 26A JANSR2N7269 u::rrC,.ad
IRHM3250 300K Rads (Si) 0.109 26A JANSF2N7269 "sis'
IRHM4250 600K Rads (Si) 0.10n 26A JANSG2N7269
IRHM8250 1000K Rads (Si 0 lon 6A JANSH2N7269 TO-254AA
International Rectifer's RADHard HEXFET0technow .
ogy provides high performance power MOSFETs for Features.
space applications. This technology has over a de- I Single Event Effect (SEE) Hardened
cade of proven performance and reliability in satellite II Low RDS(on)
applications. These devices have been character- ll Low Total Gate Charge
ized for both Total Dose and Single Event Effects (SEE). II Proton Tolerant
The combination of low Rdson and low gate charge I: Simple Drive Requirements
reduces the power losses in switching applications a Ease of Paralleling
such as DC to DC converters and motor control. These " Hermetically Sealed
devices retain all of the well established advantages :1 Ceramic Eyelets
of MOSFETs such as voltage control, fast switching, a Light Weight
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings Pre-lrradiation
Parameter Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 16 A
IDM Pulsed Drain Current C) 104
PD @ TC = 25°C Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current CO 26 A
EAR Repetitive Avalanche Energy Cf) 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 9.3 (Typical) g
For footnotes refer to the last page
1
10/11/00
IRHM7250, JANSR2N7269 Pre-lrradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V VGS =0 V, ID = 1.0mA
ABVDss/ATJ Temperature Coemcient of Breakdown - 0.27 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source - - 0.10 VGS = 12V, t = 16A
On-State Resistance - - 0.11 n VGS = 12V, ID = 26A
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 1.0mA
gfs Forward Transconductance 8.0 - - S (U) VDs > 15V, log = 16A ©
loss Zero Gate Voltage Drain Current - - 25 VDS= 160V,VGs=0V
- - 250 “A VDS = 160V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge - - 170 VGS = 12V, ID = 26A
Qgs Gate-to-Source Charge - - 30 nC VDS = 100V
di Gate-to-Drain ('Miller') Charge - - 60
td(on) Turn-On Delay Time - - 33 VDD = 100V, ID = 26A,
tr Rise Time - - 140 Rs = 2.359
td(off) Turn-Off Delay Time - - 140 ns
tt FallTime - - 140
LS + LD Total Inductance - 6.8 - nH Measured from drainlead(6mml0.25in.from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 4700 - VGS = 0V, VDs = 25V
Coss Output Capacitance - 850 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 210 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - 26 A
ISM Pulse Source Current (Body Diode) co - - 104
VSD Diode Forward Voltage - - 1.4 V Tj = 25°C, ls = 26A, VGS = 0V ©
trr Reverse Recovery Time - - 820 nS Tj = 25°C, IF = 26A, di/dt 2 100A/ps
QRR Reverse Recovery Charge - - 12 pC VDD 3 25V @
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 0.83 "CA/V
RthCS Case-to-sink - 0.21 -
RthJA Junction-to-Ambient - - 48 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
