IRGSL14C40L ,430V Low-Vceon Discrete IGBT in a TO-262 package
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IRGSL14C40L
430V Low-Vceon Discrete IGBT in a TO-220AB package
International
TOR. Rectifier Ignition IGBT
Features
-Most Rugged in Industry
"Logic-Level Gate Drive
°> 6KV ESD Gate Protection
°Low Saturation Voltage
"High Self-clamped Inductive Switching Energy
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Absolute Maximum Ratings
PD-93891A
IRGS14C40L
|RGSL14C4OL
IRGB14C40L
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
TERMINAL DIAGRAM Col lector
r - - °BVcEs = 370V min, 430V max
Emitter
I "lc@Tc= 110°C = 14A
RA har, (K) women) typ= 1.2V @7A @25°c
I °|L(min)=11.5A @25°C,L=4.7mH
JEDEC TO-263AB JEDEC TO-262AA
tiiiiiir, 4riiir,, .
IRGS14C40L |RGSL14C'40L
JEDEC TO-220AB
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Parameter Max Unit Condition
VCES Collector-to-Emitter Voltage Clamped V Rs = 1K ohm
Io @ To = 25°C Continuous Collector Current 20 A VGE = 5V
k: @ Tc = 110°C Continuous Collector Current 14 A VGE = 5V
Is Continuous Gate Current 1 mA
Isp Peak Gate Current 10 mA tpK= 1ms, f= 100Hz
VGE Gate-to-Emitter Voltage Clamped V
Pr, @ Tc = 25''C Maximum Power Dissipation 125 W
PD @ T = 110°C Maximum Power Dissipation 54 W
T: Operating Junction and - 40 to 175 "C
Tsms Storage Temperature Range - 40 to 175 ''C
VESD Electrostatic Voltage 6 KV C = 100pF, R = 1.5K ohm
IL Self-clamped Inductive Switching Current 11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter Min Typ Max Unit
ReJC Thermal Resistance, Junction-to-Case 1.2
ReJA Thermal Resistance, Junction-to-Ambient 40 'C/W
(PCB Mounted, Steady State)
i%c Transient Thermal Impedance, Juction-to-Case (Fig.11)
Page f 4/7/2000
International IRGS14C40L
TOR. Rectifier Ignition IGBT IRGSL14C4OL
IRGB14C40L
Off-State Electrical Charasteristics © T, = 25°C unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
BVCES Collector-to-Emitter Breakdown Voltage 370 400 430 V R G = 1K ohm, I c=7A, I/ss = 0V
BVGES Gate-to-Emitter Breakdown Voltage 10 12 V l G=2m A
I CES Collector-to-Emitter Leakage Current 15 pA R s=1 K ohm, I/cs = 250V
100 “A R G=1K ohm, VCE = 250V, T: =150°C
BVCER Emitter-to-Collector Breakdown Voltage 24 28 V I c = -10m A
R 1 Gate Series Resistance 75 ohm
R 2 Gate-to-Emi) Resistance 10 20 30 K ohm
On-State Electrical Charasteristics © T., = 25°C (unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
1.2 1.40 I c = 7A, VGE = 4.5V
VCE(on) Collector-to-Emi) Saturation 1.35 1.55 V I C = 10A, VGE = 4.5V
Voltage 1.35 1.55 I C = 10A, VGE = 4.5V, Tc= -40°C 2
1.5 1.7 I C = 14A, VGE = 5.0V, Tc-- -4o°C
1.55 1.75 lo =14A,VGE = 5.0V
1.6 1.8 Ic = 14A, VGE = 5.0V, Tc=150°C
VGEm Gate Threshold Voltage 1.3 1.8 2.2 V I/cs = VGE, l c = 1 m A, Tc=25°C 3, 5
0.75 1.8 Veg = Veg. I c = 1 m A, Tc=150°C 8
gts Transconductanoe 10 15 19 S VCE = 25V, I c = 10A, Tc=25°C
I C Collector Current 20 A VCE = 10V, VGE = 4.5V
Switching Characteristics © T., = 25°C unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
Q a Total Gate charge 27 l c = 10A, VCE=12V, VGE=5V 7
OJ: Gate - Emitter Charge 2.5 nC I C = 10A, VCE=12V, VGE=5V 15
Q gc Gate - Collector Charge 10 I c = 10A, VCE=12V, VGE=5V
td(0n) Turn - on delay time 0.6 0.9 1.35 VGE=5V, RG=1 K ohm, L=1mH, ch=14V 12
tr Rise time 1.6 2.8 4 ps VGE=5V, RG=1K ohm, L=1mH, VCE=14V 14
tdoff) Turn - off delay time 3.7 6 8.3 VGE=5V, Rc=1 K ohm, L=1mH, ch=300V
gig Input Capacitance 550 825 YSE=0V, Vat25V, f=1M H z
C_Des Output Capacitance 100 150 pF VGE=0V, VCE=25V, f=1 M H z 6
C res Reverse Transfer Capacitance 12 18 VGE--OV, Vce=25V, f=1 M H it
25 L=0.7m H, Tc=25°C
I L Selt-Clamped 15.5 A L=2.2m H, Tc=25°C 9
Inductive Switching Current 11.5 L=4.7m H, Tc=25°C 10
16.5 L=1.5m H, Tc=150°C 13
7.5 L=4.7m H, Tc=150°C 14
6 L=8.7m H, TC=150°C
T: =150°C.
t SC Short Circuit WIthstand Time 120 us Vcc = 16V, L = 10pH 14
RG=1Kohm,VGE=5V
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