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IRGS4B60KD1-IRGSL4B60KD1
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Low VCE (on) Non Punch Through IGBT Technology.
. 10ps Short Circuit Capability.
. Square RBSOA.
. Positive VCE (on) Temperature Coefficient.
. Maximum Junction Temperature rated at 175°C
Benefits
. Benchmark Efficiency for Motor Control.
. Rugged Transient Performance.
PD - 94607A
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
n-channel
VCES =
Ic = 7.6A, TC=100°C
tsc > 10ps, T J=150°C
VCE(on) typ. = 2.1V
. Low EMI. . l l,
. Excellent Current Sharing in Parallel Operation. u. ' ' '
TO-220 D2Pak TO-262
IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Absolute Maximum Ratings
Parameter Max. Units
chs Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 11
Ic @ Tc = 100°C Continuous Collector Current 7.6 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 22
Ls, Clamped Inductive Load current (D 22
IF @ Tc = 25°C Diode Continuous Forward Current 11
IF @ Tc = 100°C Diode Continuous Forward Current 6.7
bs, Diode Maximum Forward Current 22
VGE Gate-to-Emitter Voltage t20 V
PD @ TC = 25°C Maximum Power Dissipation 63 W
Pro @ TC = 100°C Maximum Power Dissipation 31
T J Operating Junction and -55 to +175
TSTG Storage Temperature Range "C
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal l Mechanical Characteristics
Parameter Min. Typ. Max. Units
ROJC Junction-to-Case- IGBT - - 2.4 "C/VV
ROJC Junction-to-Case- Diode - - 6.1
Rocs Case-to-Sink, flat, greased surface - 0.50 -
RNA Junction-to-Ambient - - 62
Ross Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
05/28/03
IRGB/S/SL4B60KD1
International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V Vas = 0V, Ic = 500pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.28 - Vl°C VGE = 0V, Ic = 1mA (25°C-150°C)
- 2.1 2.5 Ic = 4.0A, VGE = 15V, T, = 25''C 5,6,7
VCE(on) Collector-to-Emitter Voltage - 2.5 2.8 V lc = 4.0A, VGE = 15V, T, = 150°C 9,10,11
- 2.6 2.9 IC = 4.0A, VGE = 15V, T, = 175°C
V6501.) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, Ic = 250pA 9,10,11
AVGEm/ATJ Threshold Voltage temp. coefficient - -8.1 - mV/°C VCE = Vas, IC = 1mA (25°C-150°C) 12
gfe Forward Transconductance - 1.7 - S VCE = 50V, IC = 4.0A, PW = 80ps
- 1.0 150 Vas = 0V, VCE = 600V
ICES Zero Gate Voltage Collector Current - 136 600 pA I/ss = 0V, VCE = 600V, T J = 150°C
- 722 2400 VGE = 0V, I/cs = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop - 1.4 2.0 V IF = 4.0A 8
- 1.3 1.8 IF = 4.0A, T: =150°C
- 1.2 1.7 |F=4.0A,TJ=175°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = EOV
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions RehFig.
q, Total Gate Charge (turn-on) - 12 - lc = 4.0A 23
Qge Gate-to-Emitter Charge (turn-on) - 1.7 - nC Vcc = 400V CTI
Qgo Gate-to-Collector Charge (turn-on) - 6.5 - VGE = 15V
Eon Turn-On Switching Loss - 73 80 IC = 4.0A, Vcc = 400V CT4
Em Turn-Off Switching Loss - 47 53 pJ VGE = 15V, Rs = 1009, L = 2.5mH
Etot Total Switching Loss - 120 130 T: = 25°C ©
tam) Turn-On delay time - 22 28 lc = 4.0A, Vcc = 400V
tr Rise time - 18 23 ns VGE = 15V, Rs = 1009. L = 2.5mH on
two Turn-Off delay time - 100 110 T J = 25''C
t, Fall time - 66 80
Eon Turn-On Switching Loss - 130 150 Ic = 4.0A, Vcc = 400V CT4
' Turn-Off Switching Loss - 83 140 pJ VGE = 15V, Rs = 1009, L = 2.5mH 13,15
Em Total Switching Loss - 220 280 T J = 150°C © WF1.WF2
tam) Turn-On delay time - 22 27 lc = 4.0A, Vcc = 400V 14,16
t, Rise time - 18 22 ns VGE = 15V, Rs = 1009, L = 2.5mH cu
tam“) Turn-Off delay time - 120 130 T J = 150°C 1NFI
t, Fall time - 79 89 WF2
Cies Input Capacitance - 190 - VGE = 0V
Cues Output Capacitance - 25 - pF Vcc = 30V 22
Cres Reverse Transfer Capacitance - 6.2 - f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE T J = 150°C, lc = 22A, Vp = 600V 4
VCC=500V,VGE = +15V to OV,RG = 1009 CT2
SCSOA Short Circuit Safe Operating Area 10 - - ps T, = 150°C, Vp = 600V, Rs = 1009 CT3
Vcc=360V,VGE = +15V to 0V w1=4
Erec Reverse Recovery Energy of the Diode - 81 100 pJ T: = 150°C 17,18,19
trr Diode Reverse Recovery Time - 93 - ns Vcc = 400V, IF = 4.0A, L = 2.5mH 2021
I,, Peak Reverse Recovery Current - 6.3 7.9 A VGE = 15V, Rs = 1009 CT4,WF3
Note co to © are on page 16
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