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IRGS4062D
600V Low VCEon Copack IGBT in a D2-Pak package
International
TOR Rectifier
INSULA TED GA TE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
97355B
lRGS4062DPbF
IRGSL4062DPbF
Features C
q Low VCE (ON) Trench IGBT Technology VCES = 600V
q Low switching losses ,
q MaximumJunctiontemperature 175 °C IC = 24A, To = 100°C
q 5 pS short circuit SOA
q Square RBSOA G tsc 2 5ps, TJ(maX) = 175°C
q 100% of the parts tested for 4X rated current (ILM)
- Positive VCE(ON)Temperature co-efficient E VCE(on) typ. = 1 .65V
q Ultra fast soft Recovery Co-Pak Diode n-channel
q Tightparameterdistribution
q Lead Free Package
Benefits T " f ‘5 s)
q High Efficiency in a wide range of applications " 'il); \- ', -if
q Suitable for a wide range of switching frequencies due to G 'G
Low VCE (ON) and Low Switching losses D2Pak TO-262
q Rugged transient Performance for increased reliability
Excellent Currentsharing in parallel operation
IRGS4062DPbF IRGSL4062DPbF
q Low EMI
Gate Collector Emitter
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc © Tc = 25°C Continuous Collector Current 48
lc © Tc = 100°C Continuous Collector Current 24
G, Pulse Collector Current 96
ILM Clamped Inductive Load Current CD 96 A
IF @ Tc = 25°C Diode Continous Forward Current 48
V @ TC = 100°C Diode Continous Forward Current 24
lm Diode Maximum Forward Current © 96
VGE Continuous Gate-to-Emitter Voltage t20 V
Transient Gate-ttrEmitter Voltage t30
Po @ Tc = 25°C Maximum Power Dissipation 250 W
Po @ To = 100°C Maximum Power Dissipation 125
T, Operating Junction and -55 to +175
Tsm Storage Temperature Range I
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm (IGBT) Thermal Resistance Junction-to-Case-Wat' IGBT) - - 0.60
Rom (Diode) Thermal Resistance Junction-to-Case-each Diode) - - 1.53 °C/W
Recs Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.50 -
ROJA Thermal Resistance, Junction-to-Ambient (typical socket mount) -- 80 --
12/07/09
IRGS/SL4062DPbF
International
TOR Rectifier
Electrical Characteristics © T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
Vorncss Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 100pA © CT6
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.30 - V/°C VGE = 0V, Ic = 1mA (25°C-175°C) CT6
- 1.60 1.95 IC = 24A, l/ss = 15V, T, = 25°C 5,6,7
Vcaon) Collector-to-Emitter Saturation Voltage - 2.03 - V Ic = 24A, l/ss = 15V, T, = 150°C 9,10,11
- 2.04 - IC = 24A, l/ss =15v,TJ =175°C
Vegan) Gate Threshold Voltage 4.0 - 6.5 V VCE = Vas, IC = 700pA 9, IO,
AVGEnm/ATJ Threshold Voltage temp. coefficient - -18 - mV/°C VCE = Vas, IC = 1.0mA (25°C - 175°C) ll, 12
gfe Forward Transconductance - 17 - S VCE = 50V, Ic = 24A, PW = 80ps
legs Collector-to-Emitter Leakage Current - 2.0 25 pA VGE = 0V, VCE = 600V
- 775 - l/ss = 0V, l/cs = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop - 1.80 2.6 V IF = 24A 8
- 1.28 - IF = 24A, T, =175°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA Vas = t20)/
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
q, Total Gate Charge (turn-on) - 50 75 Ic = 24A 24
Qge Gate-to-Emitter Charge (turn-on) - 13 20 nC VGE = 15V CT1
Cgc Gate-to-Collector Charge (turn-on) - 21 31 Vcc = 400V
Eon Turn-On Switching Loss - 115 201 Ic = 24A, Vcc = 400V, VGE = 15V CT4
Es, Turn-Off Switching Loss - 600 700 pd Rs = 109, L = 200pH, Ls = 150nH, T, = 25°C
Ema. Total Switching Loss - 715 901 Energy losses include tail & diode reverse recovery
Hon) Tum-On delay time - 41 53 IC = 24A, Vcc = 400V, l/se = 15V CT4
t, Rise time - 22 31 ns Ra = 109, L = 200pH, Ls =150nH,TJ = 25°C
tum") Turn-Off delay time - 104 115
tr Fall time - 29 41
E0n Turn-On Switching Loss - 420 - Ic = 24A, Vcc = 400V, VGE=15V 13, 15
Es, Turn-Off Switching Loss - 840 - pd RG=109, L=100pH, Ls=150nH, TJ = 175°C © CT4
Em,” Total Switching Loss - 1260 - Energy losses include tail & diode reverse recovery WF1, WF2
tdmn) Turn-On delay time - 40 - Ic = 24A, Vcc = 400V, Vas = 15V 14,16
tr Rise time - 24 - ns Ra = 109, L = 200pH, Ls = 150nH CT4
tdwm Turn-Off delay time - 125 - T: = 175°C WFI
tr Fall time - 39 - WF2
Cies Input Capacitance - 1490 - pF l/ss = OV 23
Com, Output Capacitance - 129 - Vcc = 30V
Cres Reverse Transfer Capacitance - 45 - f = 1.0Mhz
T, =175°C, Ic = 96A 4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 480V, Vp =600V CT2
Rg =1OQ, VGE = +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 - - us Vcc = 400V, Vp =600V 22, CT3
Rg = Ion, l/ss = +15V to 0V WF4
Erec Reverse Recovery Energy of the Diode - 621 - pJ T, = 175°C 17, 18, 19
t,, Diode Reverse Recovery Time - 89 - ns Vcc = 400V, IF = 24A 20,21
Ir, Peak Reverse Recovery Current - 37 - A VGE = 15V, Rg = Ion, L =200pH, L, = 150nH WF3
Notes:
CD Vcc = 80% (Vcss), Vas = 20v, L =100pH, RG =109.
© Pulse width limited by max. junction temperature.
© Refer to AN-1086 for guidelines for measuring V safely.
(BR)CES
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