IRGS30B60K ,600V UltraFast 10-30 kHz IGBT in a D2-Pak packageFeaturesI = 50A, T =100°CC C• Low VCE (on) Non Punch Through IGBT Technology.at T =175°CJ• 10µs Sho ..
IRGS4062D ,600V Low VCEon Copack IGBT in a D2-Pak packageapplications EEC Suitable for a wide range of switching frequencies due toGGLow V and Low Switchin ..
IRGS4B60K ,600V Low VCEon Copack IGBT in a D2Pak package IRGB4B60KIRGS4B60KINSULATED GATE BIPOLAR TRANSISTOR IRGSL4B60K
IRGS4B60KD1 ,600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package IRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT R ..
IRGS6B60K ,600V UltraFast 10-30 kHz IGBT in a D2-Pak packageIRGB6B60KIRGS6B60KINSULATED GATE BIPOLAR TRANSISTORIRGSL6B60KCV = 600VCES
IRGS8B60K ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageFeaturesV = 600VCES• Low VCE (on) Non Punch Through IGBT Technology.• 10µs Short Circuit Capability ..
ISP1181BBS ,ISP1181B; Full-speed Universal Serial Bus peripheral controller
ISP1181BDGG ,ISP1181B; Full-speed Universal Serial Bus peripheral controller
ISP1183BS ,Low-power Universal Serial Bus interface device with DMA
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
ISP1362 ,Single-chip Universal Serial Bus On-The-Go controller
IRGS30B60K
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
International
TOR Rectifier
PD - 94799
IF1GB30B60K
lF1GS30B60K
lRGSL30B60K
INSULATED GATE BIPOLAR TRANSISTOR
c N/ces = 600V
Features
. Low VCE (on) Non Punch Through IGBT Technology. IC - 50A, TO_1000 C
01005 Short Circuit Capability. at TJ=175 C
Square RBSOA. tsc > 10ps, TJ=1SOOC
. Positive VCE (on) Temperature Coefficient.
. Maximum Junction Temperature rated at 175°C. V t . = 1.95V
n-channel CE(on) yp
Benefits f '
. Benchmark Efficiency for Motor Control. l, 'gilt) rjiiii)
.I‘; _ C
q Rugged Transient Performance. \ff‘r _ N.. \f‘"!
. Low EMI. 'i"" "isa" l,
. Excellent Current Sharing in Parallel Operation. "
TO-220AB D2Pak TO-262
IRGB30B60K IRGS30B60K IRGSL30B60K
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 78©
lc @ To = 100°C Continuous Collector Current 50 A
ICM Pulse Collector Current (Ref.Fig.C.T.5) 120
ILM Clamped Inductive Load current C) 120
VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V
l/ss Gate-to-Emitter Voltage t20
PD © Tc = 25°C Maximum Power Dissipation 370 W
PD @ Tc = 100°C Maximum Power Dissipation 180
To Operating Junction and -55 to +175
Tsre Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw IO Ibf-in (1.1 N-m)
Thermal / Mechanical Characteristics
Parameter Min. Typ. Max. Units
F10 Jo Junction-to-Case- IGBT - - 0.41 °C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
ROJA Junction-to-Ambient, typical socket mount © _ -- 62
ROJA Junction-to-Ambient (PCB Mount, Steady State)© - - 40
Wt Weight - 1.44 -- g
1
10/8/03
IRGB/S/SL30B60K
International
TO.R Rectifier
Electrical Characteristics © T,, = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(Bmgs Collector-to-Emitter Breakdown Voltage 600 - - V l/ss = 0V, Ic = 500PA
AV
- 1.95 2.35 IC = 30A, VGE = 15V, T, = 25°C 5,6,7
VCE(on) Collector-to-Emitter Voltage - 2.40 2.75 V Ic = 30A, l/se = 15V, T, = 150°C 8,9,10
- 2.6 2.95 lc = 30A, l/se =15V,TJ = 175°C
Vsam) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250PA 8,9,10
AVGE(1h)/ATJ Threshold Voltage temp. coefficient - -1O - mV/°C VCE = VGE, Ic = 1.0mA (25°C-150°C) 11
gfe Forward Transconductance - 18 - S VCE = 50V, k; = 50A, PW = 80ps
- 5.0 250 l/ss = 0V, VCE = 600V
lcgs Zero Gate Voltage Collector Current - 1000 2000 HA l/ss = 0V, VCE = 600V, T J = 150°C
- 1830 3000 Vas = 0V, VCE = 600V, T: = 175°C
lass Gate-to-Emitter Leakage Current - - t100 nA Vas = t20V, l/cs = 0V
Switching Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
a, Total Gate Charge (turn-on) - 102 153 Ic = 30A 17
Qge Gate-to-Emitter Charge (turn-on) - 14 21 nC Vcc = 400V CT1
Qgc Gate-to-Collector Charge (turn-on) - 44 66 I/ss = 15V
Eon Turn-On Switching Loss - 350 620 Ic = 30A, Vcc = 400V CT4
Eott Turn-Off Switching Loss - 825 955 pd I/ss = 15V, Rs = Ion, L = 200pH
Em, Total Switching Loss - 1175 1575 T, = 25°C ©
tum) Turn-On delay time - 46 60 lc = 30A, Vcc = 400V
t, Rise time - 28 39 ns Vas = 15V, Rs = Ion, L = 200pH CT4
imam Turn-Off delay time - 185 200 T, = 25°C
tt Fall time - 31 40
Eon Turn-On Switching Loss - 635 1085 Ic = 30A, Vcc = 400V CT4
Es, Turn-Off Switching Loss - 1150 1350 pJ l/ss = 15V, Re = Ion, L = 200pH 12,14
Em Total Switching Loss - 1785 2435 TJ = 150°C © WF1,WF2
tam", Turn-On delay time - 46 60 Ic = 30A, Vcc = 400V 13,15
t, Rise time - 28 39 ns Vss = 15V, Rs = Ion, L = 200pH CT4
tdmm Turn-Off delay time - 205 235 To = 150°C WF1
t, Fall time - 32 42 WF2
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1750 2500 Vss = 0V
COes Output Capacitance - 160 255 pF Vcc = 30V 16
Cres Reverse Transfer Capacitance - 60 90 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE T, = 150°C, Ic = 120A, Vp = 600V 4
VCC=500V,VGE = +15V to 0V.RG =10Q CT2
SCSOA Short Circuit Safe Operating Area 10 - - ps To = 150°C, Vp = 600V, Re = 1052 CT3
Vcc=360V,VGE = +15Vto 0V WF3
Isc (Peak) Peak Short Circuit Collector Current - 200 - A WF3
Note co to (5) are on page 13
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