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IRGPS60B120KD
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package
International
TOR Rectifier
PD- 94239
IRGPS60lT120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Low VCE (on) Non Punch Through IGBT Technology.
. Low Diode VF.
. 10ps Short Circuit Capability.
. Square RBSOA.
. Ultrasoft Diode Reverse Recovery Characteristics.
. Positive VCE (on) Temperature Coemcient.
. Super-247 Package.
Benefits
. Benchmark Emciency for Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Signircantly Less Snubber Required
. Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Motor Control Co-Pack IGBT
C VCES = 1200V
VCE(on) typ. = 2.5ov
@ VGE = 15V,
N-chanEneI ICE = 60A, Tj=25°C
SIC,'),','::,),'. "v.
Super-247TM
Parameter Max. Units
VCES Collector-to-Emi) Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 105©
Ic @ Tc = 100°C Continuous Collector Current 60
ICM Pulsed Collector Current 240 A
G, Clamped Inductive Load Current 240
IF @ Tc = 25°C Diode Continuous Forward Current 120
IF @ Tc = 100°C Diode Continuous Forward Current 60
IFM Diode Maximum Forward Current 240
VGE Gate-to-Emitter Voltage 1 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 595 W
Po @ Tc = 100°C Maximum Power Dissipation 238
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rsoc Junction-to-Case - IGBT - - 0.20
Rsuc Junction-to-Case - Diode - - 0.41 "C/W
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Recommended Clip Force 20 (2) - - N(kgf)
Wt Weight - 6.0 (0.21) - g (oz)
Le Internal Emitter Inductance (5mm from package) - 13 - nH
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01/17/02
IRGPS60B120KD
Internationa
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 - - V VGE = 0V, k: = 500pA
AV
V0.30”) Collector-to-Emitter Saturation Voltage - 2.33 2.50 lc = 50A N/ss = 15V 5, 6
- 2.50 2.75 V Ic = 60A 7, 9
- 2.79 3.1 Ic = 50A, T: = 125°C 10
3.04 3.5 lc = 60A, To = 125°C 11
VGE(th) Gate Threshold Voltage 4.0 5.0 6.0 VCE = VGE, Ic = 250pA 9,10
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C I/cs = VGE, lc = 1.0mA, (25°C-125°C) 11 ,12
gfe FonNard Transconductance - 34.4 - S I/cs = 50V, k: = 60A, PW=80ps
ICES Zero Gate Voltage Collector Current - - 500 pA VGE = 0V, VCE = 1200V
- 650 1350 VGE = 0V, VCE = 1200V, To = 125°C
VFM Diode Forward Voltage Drop - 1.82 2.10 lc = 50A
- 1.93 2.20 v lc = 60A 8
- 1.96 2.20 Ic = 50A, To = 125°C
- 2.13 2.40 k: = 60A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
Qg Total Gate Charge (turn-on) - 340 510 Ic = 60A 23
Qge Gate - Emitter Charge (turn-on) - 40 60 nC Vcc = 600V CT1
(U, Gate - Collector Charge (turn-on) - 165 248 VGE = 15V
Eon Turn-On Switching Loss - 3214 4870 pJ Ic = 60A, Vcc = 600V CT4
Es, Turn-Off Switching Loss - 4783 5450 VGE = 15V,RG = 4.79, L =200pH WF1
Em Total Switching Loss - 8000 10320 Ls = 150nH T = 25''C . WF2
EDn Turn-On Switching Loss - 5032 6890 To = 125°C 13,15
Eoff Turn-Off Switching Loss - 7457 8385 pJ Energy losses include "tail" and
Em, Total Switching Loss - 1250015275 diode reverse recovery.
tdwn) Turn-On Delay Time - 72 94 lc = 15A, Vcc = 600V 14, 16
tr Rise Time - 32 45 VGE = 15V, Rs = 4.79 L =200pH CT4
tam) Turn-Off Delay Time - 366 400 ns Ls = 150nH, To = 125°C WF1
tf Fall Time - 45 58 WF2
Cies Input Capacitance - 4300 - VGE = 0V
Goes Output Capacitance - 395 - pF Vcc = 30V 22
Cres Reverse Transfer Capacitance - 160 - f= 1.0MHz
To = 150°C, Ic = 240A, Vp =1200V 4
RBSOA Reverse Bias Safe Opening Area FULL SQUARE Vcc = 1000V, VGE = +15V to 0V CT2
Rs = 4.79
. . . To = 150°C, Vp =1200V CT3
SCSOA Short Circuit Safe Operting Area 10 - - ps Vcc = 900V, VGE = +15V to 0V, WF4
RG = 4.79
Erec Reverse Recovery energy of the diode - 3346 - pJ To = 125°C 17,18,19
In Diode Reverse Recovery time - 180 - ns Vcc = 600V, 1.: = 60A, L =200pH 20, 21
In Diode Peak Reverse Recovery Current - 50 - A VGE = 15V,RG = 4.79, Ls = 150nH CT4,WF3
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