IRGPH50M ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
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IRGPH50M
1200V Discrete IGBT in a TO-3P (TO-247AC) package
I PD - 9.1030
Interittatii,Etal
IOR Rectifier IRGPH50M
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated
Fast IGBT
Features C
-Shrt' it ted-IO 125°C,V =15V -
. Swtchr:;[-Jllosr: Eating irfllges all "tail"G|:sses VCES - 1200V
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency VCE(sat) C 2.9V
curve G
E @VGE = 15V, lc = 23A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 42
Ic @ Tc = 100°C Continuous Collector Current 23 A
ICM Pulsed Collector Current (D 84
ILM Clamped Inductive Load Current © 84
tsc Short Circuit 1Mthstand Time 10 us
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
Po @ Tc = 25°C Maximum Power Dissipation 200 W
Po @ Tc = 100°C Maximum Power Dissipation 78
T J Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 0.64
Recs Case-to-Sink, flat, greased surface - 0.24 - ''CA/V
' Junction-to-Ambient, typical socket mount - - 40
N Weight - 6 (0.21) - g (oz)
Revision 1
IRGPH50M
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 1200 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Ehitter-ttrCcllettor Breakdown Voltage (E) 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temp. Coeff. of Breakdown Voltage - 1.1 - V/''C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-emitter Saturation Voltage - 2.3 2.9 lc = 23A VGE = 15V
- 3.0 - V Ic = 42A See Fig. 2, 5
- 2.8 - Ic = 23A, T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temp. Coeff. of Threshold Voltage - -13 - mV/“C VCE = VGE, lc = 250pA
gfe Forward Transconductance © 11 15 - S VCE = 100V, lc = 23A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 2000 VGE = 0V, VCE = 1200V, To = 150°C
IGES Gate-to-Emi) Leakage Current - - i100 nA VGE = :e20N/
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 89 130 Ic = 23A
Qge Gate - Emitter Charge (turn-on) - 22 33 nC Vcc = 400V See Fig. 8
099 Gate - Collector Charge (turn-on) - 26 39 VGE = 15V
tam) Tum-On Delay Time - 42 - TJ = 25°C
tr Rise Time - 32 - ns Ic = 23A, Vcc = 960V
tii(ott) Tum-Off Delay Time - 280 820 VGE = 15V, Rs = 5.09
tf Fall Time - 190 410 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.6 -
Eoff Turn-Off Switching Loss - 3.3 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 4.9 11
tsc Short Circuit Vthtand Time 10 - - us Vcc = 720V, To = 125°C
VGE = 15V, Rs = 5.0n, chK < 1000V
tision) Tum-On Delay Time - 32 - To = 150°C,
tr Rise Time - 21 - ns k: = 23A, Vcc = 960V
tam) Turn-Off Delay Time - 490 - VGE = 15V, RG = 5.09
tr Fall Time - 440 - Energy losses include "tail"
Ets Total Switching Loss - 10 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1900 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 24 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b)
© Vcc=80%(VcEs), VGE=20V: L=10pH,
Rs-- 5.09, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
6) Pulse width 5.0ps,
single shot.
© Pulse width f 80ps; duty factor s: 0.1%.
