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T0-247AC
Absolute Maximum Ratings
..
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IRGPH50F
1200V Discrete IGBT in a TO-3P (TO-247AC) package
International
Rectifier
PD - 9.761A
IRGPH50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-Ioss rating includes all "tail" losses
I Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high- /
Fast Speed IGBT
n-channel
VCES = 1200V
VCE(sat) S 2.9V
@VGE = 15V, lc = 25A
current applications.
(io(it',
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
Ic @ To = 25''C Continuous Collector Current 45
lc @ To = 100°C Continuous Collector Current 25 A
ICM Pulsed Collector Current (D 90
ILM Clamped Inductive Load Current © 90
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
Pro @ Tc = 25°C Maximum Power Dissipation 200 W
Po @ Tc = 100°C Maximum Power Dissipation 78
To Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibfoin (1.1N'm)
Thermal Resistance
Parameter Min Typ. Max. Units
Reoc Junction-to-Case - - 0.64
Recs Case-to-Sink, flat, greased surface - 0.24 - °CNV
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPH50F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-emitter Breakdown Voltage 1200 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Colledor Breakdown Voltage © 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.3 - V/''C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emi) Saturation Voltage - 2.1 2.9 Ic = 25A VGE = 15V
- 2.5 - V Ic = 45A See Fig. 2, 5
- 2.4 - Ic = 25A, To = 150°C
VGEah) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -14 - mV/°C VCE = VGE, Ic = 250PA
9te Forward Transconductance © 7.5 17 - S VCE = 100V, IC = 25A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 1200 VGE = 0V, VCE = 1200V, To = 150°C
IGES Gate-to-Emitter Leakage Current - - 1100 nA VGE = i20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 82 100 Ic = 25A
099 Gate - Emitter Charge (tum-on) - 16 21 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 3O 43 VGE = 15V
tdwn) Turn-On Delay Time - 34 - Tu = 25°C
tr Rise Time - 13 - ns k: = 25A, Vcc = 960V
tam) Turn-Off Delay Time - 320 480 VGE = 15V, Rs = 5.09
tf Fall Time - 240 330 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.4 -
Eoff Turn-Off Switching Loss - 4.5 - mJ See Fig. 9, 10, 11, 14
ES Total Switching Loss - 5.9 8.2
tdwn) Turn-On Delay Time - 33 - TJ = 150°C,
tr Rise Time - 15 - ns Ic = 25A, Vcc = 960V
tam) Turn-Off Delay Time - 590 - VGE = 15V, Rs = 5.09
tr Fall Time - 500 - Energy losses include "tail"
Ets Total Switching Loss - 13 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2400 - VGE = 0V
Coes Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 28 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Rs-- 5.09, ( See fig. 13a )
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
© Pulse width S 80ps; duty factor f, 0.1%.
