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T0-247AC
Absolute Maximum Ratings
..
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IRGPH40FD2
1200V Copack IGBT in a TO-3P (TO-247AC) package
PD-9.1117
IRGPH40FD2
Fast CoPack IGBT
b'ttetttaitEtal
1912 Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY
Features C
. Switching-loss rating includes all "tail" losses VCES = 1200V
. HEXFRED" soft ultrafast diodes
. Optimized for medium operating frequency (1 to VCE(sat) S 3.3V
10kHz) See Fig. 1 for Current vs. Frequency curve
@VGE =15V,IC = 17A
n-channel
Description
Co-packaged IGBTs are a natural extension of International RectifIer's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 29
IC @ Tc = 100°C Continuous Collector Current 17
ICM Pulsed Collector Current C) 58 A
ILM Clamped Inductive Load Current © 58
IF @ Tc = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Fon/vard Current 130
VGE Gate-to-Emitter Voltage * 20 V
PD @ Tc = 25°C Maximum Power Dissipation 160 W
PD @ Tc = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 0.77
ReJc Junction-to-Case - Diode - - 1.7 °CNV
Recs Case-to-Sink, flat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 1
IRGPH40FD2 TOR
Electrical Characteristics @ In = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage © 1200 - - V VGE = 0V, Ic = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.3 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 2.5 3.3 k: = 17A I/tss = 15V
- 3.2 - V lc = 29A See Fig. 2, 5
- 3.0 - lc =17A,TJ = 150°C
Veth) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250pA
gm Forward Transconductance (9 5.0 11 - S VCE = 100V, Ic = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 1000 VGE = 0V, VCE = 1200V, To = 150°C
VFM Diode Forward Voltage Drop - 2.6 3.3 V lc = 8.0A See Fig. 13
- 2.3 3.0 Ic = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 45 67 lc = 17A
Qge Gate - Emitter Charge (tum-on) - 11 16 nC Vcc = 400V
Qgo Gate - Collector Charge (turn-on) - 17 26 See Fig. 8
tdmn) Tum-On Delay Time - 70 - T: = 25°C
tr Rise Time - 58 - ns Ic = 17A, Vcc = 800V
tdmff) Turn-Off Delay Time - 320 550 VGE = 15V, Rs = lon
tf Fall Time - 370 630 Energy losses include "tail" and
Eon Turn-On Switching Loss - 2.6 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 5.4 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 8.0 15
tum) Tum-On Delay Time - 70 - T: = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 54 - ns Ic = 17A, Vcc = 800V
tu(ott) Turn-Off Delay Time - 670 - VGE = 15V, Rs = lon
tr Fall Time - 930 - Energy losses include "tail" and
Ets Total Switching Loss - 15 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1200 - VGE = 0V
Coes Output Capacitance - 75 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 15 - f = 1.0MHz
trr Diode Reverse Recovery Time - 63 95 ns Tu = 25°C See Fig.
- 106 160 Tu = 125°C 14 IF = 8.0A
|rr Diode Peak Reverse Recovery Current - 4.5 8.0 A Tu = 25°C See Fig.
- 6.2 11 Tu =125°C 15 V R = 200V
G, Diode Reverse Recovery Charge - 140 380 nC T J = 25°C See Fig.
- 335 880 T J = 125''C 16 di/dt = 200Nps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 133 - Alps TJ = 25°C See Fig.
During tb - 85 - To = 125°C 17
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
© VCC=80%(VCES)v VsE=20V, L=10pH,
RG=1OQ, (See fig. 19)
© Pulse width S 80ps; duty factor 5 0.1%.
© Pulse width 5.0ps,
single shot.
