IRGPH40F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH40FD2 ,1200V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH50F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGPH50KD2 ,1200V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.
T0-247AC
Absolute Maximum Ratings
..
IRGPH50M ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
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IRGPH40F
1200V Discrete IGBT in a TO-3P (TO-247AC) package
International
IOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-Ioss rating includes all "tail" losses
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
PD - 9.764
IRGPH40F
Fast Speed IGBT
n-channel
VCES = 1200V
VCE(sat) f 3.3V
@VGE =15V,lc = 17A
the same time having simpler gate-drive requirements of the familiar power Wit
MOSFET. They provide substantial benefits to a host of high-voltage, high- / /
current applications. /
'//)//
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emi) Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 29
lc @ Tc = 100°C Continuous Collector Current 17 A
ICM Pulsed Collector Current (D 58
ILM Clamped Inductive Load Current © 58
VGE Gate-to-Emi) Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
Po @ Tc = 25°C Maximum Power Dissipation 160 W
Po @ TC = 100°C Maximum Power Dissipation 65
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - - 0.77
Recs Case-to-Sink, flat, greased surface - 0.24 - ''C/W
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPH40F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CEs Collector-to-emitter Breakdown Voltage 1200 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-ttA/hor Breakdown Voltage C9 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 1.3 - V/°C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emi) Saturation Voltage - 2.5 3.3 k: = 17A VGE = 15V
- 3.2 - V Ic = 29A See Fig. 2, 5
- 3.0 - lc =17A,TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, k: = 250PA
gfe Forward Transconductance (S 5.0 11 - S VCE = 100V, Ic = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 1000 Vas = 0V, VCE = 1200V, To = 150°C
IGES Gate-to-Emilie, Leakage Current - - 1100 nA VGE = t20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 45 67 lc = 17A
Qge Gate - Emitter Charge (turn-on) - 11 16 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 17 26 VGE = 15V
tam) Tum-On Delay Time - 33 - TJ = 25°C
tr Rise Time - 17 - ns k: = 17A, Vcc = 960V
tu(ott) Tum-Off Delay Time - 250 490 VGE = 15V, Rs = lon
tf Fall Time - 210 390 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.0 -
Eoff Turn-Off Switching Loss - 3.0 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 4.0 7.5
tam) Tum-On Delay Time - 32 - TJ = 150°C,
tr Rise Time - 20 - ns lc = 17A, Vcc = 960V
tam) Tum-Off Delay Time - 480 - VGE = 15V, RG = lon
tf Fall Time - 450 - Energy losses include "tail"
Ets Total Switching Loss - 8.3 - mJ See Fig. 10, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1200 - VGE = 0V
Cues Output Capacitance - 75 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 15 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© I/cc-Moo/ll/css), Vss=20V, L=10pH,
RG=1OQ, (See fig. 13a)
(3 Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps,
single shot.
