IRGPH20M ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPH40F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH40FD2 ,1200V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH50F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH50K , Fit Rate / Equivalent Device Hours
IRGPH50KD2 ,1200V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.
T0-247AC
Absolute Maximum Ratings
..
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IRGPH20M
1200V Discrete IGBT in a TO-3P (TO-247AC) package
International
IOR Rectifier
PD - 9.1137
IRGPH20M
INSULATED GATE BIPOLAR TRANSISTOR
Features
I Short circuit rated - 10ps @ 125°C, VGE = 15V
. Svvitching-loss rating includes all "tail" losses
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
Short Circuit Rated
Fast IGBT
VCES = 1200V
G VCE(sat) S 4.6V
E @VGE =15V, IC = 4.5A
n-channel
)hir'D(4,
the same time having simpler gate-drive requirements of the familiar power aiti-
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications. / /
These new short circuit rated devices are especially suited for motor control v////)/,)//
and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
lc @ Tc = 25°C Continuous Collector Current 6.9
Ic @ Tc = 100°C Continuous Collector Current 4.5 A
ICM Pulsed Collector Current (D 14
ILM Clamped Inductive Load Current © 14
tsc Short Circuit 1Mthstand Time 10 us
VGE Gate-to-Emitter Voltage 120 V
EARv Reverse Voltage Avalanche Energy © 5.0 mJ
Po @ Tc = 25°C Maximum Power Dissipation 60 W
PD @ Tc = 100°C Maximum Power Dissipation 24
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - - 2.1
Recs Case-to-Sink, flat, greased surface - 0.24 - ''C/W
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - e (0.21) - g (oz)
Revision 1
IRGPH20M TOR
Electrical Characteristics @ Il = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltage 1200 - - V VGE = 0V, lc = 250PA
V(BR)ECS Emitter-ttA/tor Breakdown Voltage (9 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEslATJ Temperature Coeff. of Breakdown Voltage - 1.3 - V/°C VGE = 0V, Ic = 1.0mA
Vegan) Collector-to-Emitter Saturation Voltage - 3.1 4.6 Ic = 4.5A VGE = 15V
- 3.9 - V Ic = 6.9A See Fig. 2, 5
- 4.0 - k: = 4.5A, T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = Veg, Ic = 250pA
AVGEam/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance s 1.3 2.6 - S VCE = 100V, Ic = 4.5A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 1200V
- - 1000 VGE = 0V, VCE = 1200V, To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 16 24 Ic = 4.5A
099 Gate - Emitter Charge (turn-on) - 4.4 7.0 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 5.5 8.3 VGE = 15V
tdion) Turn-On Delay Time - 26 - TJ = 25°C
tr Rise Time - 13 - ns Ic = 4.5A, Vcc = 960V
tam) Turn-Off Delay Time - 43 65 VGE = 15V, Rs = 50n
tt Fall Time - 430 640 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.33 -
Eoff Turn-Off Switching Loss - 0.78 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 1.1 1.7
tsc Short Circuit VWthstand Time 10 - - us Vcc = 720V, TJ = 125°C
VGE = 15V, Rs = 509, VCPK < 1000V
tdmn) Turn-On Delay Time - 32 - Tu = 150°C,
tr Rise Time - 20 - ns k: = 4.5A, Vcc = 960V
td(ott) Turn-Off Delay Time - 480 - VGE = 15V, Rs = 50n
tf Fall Time - 450 - Energy losses include "tail"
Ets Total Switching Loss - 2.4 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 340 - VGE = 0V
Coes Output Capacitance - 25 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 4.7 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Rs-- 50n, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
S Pulse width 5.0ps,
single shot.
© Pulse width f 80ps; duty factor f 0.1%.
