IRGPF50F ,900V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH20M ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPH40F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH40FD2 ,1200V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH50F ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPH50K , Fit Rate / Equivalent Device Hours
ISP1161 ,Full-speed Universal Serial Bus single-chip host and device controller
ISP1161a ,Full-speed Universal Serial Bus single-chip host and device controller
ISP1161A1BM ,ISP1161A1; Universal Serial Bus single-chip host and device controller
ISP1181BBS ,ISP1181B; Full-speed Universal Serial Bus peripheral controller
ISP1181BDGG ,ISP1181B; Full-speed Universal Serial Bus peripheral controller
ISP1183BS ,Low-power Universal Serial Bus interface device with DMA
IRGPF50F
900V Discrete IGBT in a TO-3P (TO-247AC) package
International
Rectifier
PD - 9.767A
IRGPF50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
I Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benehts to a host of high-voltage, high- /
Fast Speed IGBT
n-channel
VCES = 900V
VCE(sat) S 2.7V
@VGE = 15V, IC = 28A
current applications.
©(it',
v////i/)f//'
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-emitter Voltage 900 V
k: @ Tc = 25''C Continuous Collector Current 51
Ic @ Tc = 100''C Continuous Collector Current 28 A
ICM Pulsed Collector Current (D 100
ILM Clamped Inductive Load Current © 100
VGE Gate-to-emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 20 mJ
PD @ Tc = 25°C Maximum Power Dissipation 200 W
Po @ To = 100°C Maximum Power Dissipation 78
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rauc Junction-to-Case - ------ 0.64
Recs Case-to-Sink, flat, greased surface - 0.24 - "C/W
ReJA Junction-to-Ambient, typical socket mount ------------ 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPFSOF
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitler Breakdown Voltage 900 - - V VGE = 0V, Ic = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage 6 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.74 - V/"C VGE = 0V, Ic = 1.0mA
Vcaon) Collector-to-Emi) Saturation Voltage - 2.1 2.7 Ic = 28A VGE = 15V
- 2.7 - V lc = 51A See Fig. 2, 5
- 2.4 - lc = 28A, To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -9.7 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 12 18 - S VCE = 100V, lc = 28A
ICES Zero Gate Voltage Collector Current - - 250 pA l/ss = 0V, VCE = 900V
- - 2000 VGE = 0V, VCE = 900V, T: = 150°C
legs Gate-to-Emi) Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 81 120 Ic = 28A
098 Gate - Emitter Charge (tum-on) - 16 24 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 29 44 VGE = 15V
tum) Tum-On Delay Time - 32 - Tu = 25°C
tr Rise Time - 22 - ns Ic = 28A, Vcc = 720V
tuiott) Turn-Off Delay Time - 200 280 VGE = 15V, Rs = 50n
tf Fall Time - 130 180 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.1 -
Eoff Turn-Off Switching Loss - 1.8 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 2.9 4.1
tam) Tum-On Delay Time - 32 - To = 150°C,
t, Rise Time - 20 - ns Ic = 28A, Vcc = 720V
tis(om Turn-Off Delay Time - 480 - VGE = 15V, Rs = 5.on
tf Fall Time - 450 - Energy losses include "tail"
Ets Total Switching Loss - 5.7 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2300 - VGE = 0V
Cass Output Capacitance - 180 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHz
Notes:
(D Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20VY L=10pH,
RG-- 5.09, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
6) Pulse width 5.0ps,
single shot.
© Pulse width s: 80ps; duty factor 3 0.1%.
