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IRGPF40F
900V Discrete IGBT in a TO-3P (TO-247AC) package
International
Rectifier
PD - 9.77OA
IRGPF40F
INSULATED GATE BIPOLAR TRANSISTOR
Features C
. Switching-Ioss rating includes all "tail" losses -
. Optimized for medium operating frequency (1 to VCES - 900V
10kHz) See Fig. 1 for Current vs. Frequency
curve VCE(sat) S 3.3V
E @VGE =15V,lc = 17A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have © Bl
higher usable current densities than comparable bipolar transistors, while at w
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high- /
Fast Speed IGBT
current applications.
J/ij"i)f//'
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-emitter Voltage 900 V
lc @ Tc = 25°C Continuous Collector Current 31
Ic @ Tc = 100°C Continuous Collector Current 17 A
ICM Pulsed Collector Current Ci) 62
ILM Clamped Inductive Load Current © 62
Vas Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
PD @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1.1Nm0
Thermal Resistance
Parameter Min Typ. Max. Units
Rauc Junction-to-Case - - 0.77
Recs Case-to-Sink, flat, greased surface - 0.24 - "CAN
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPF40F TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 900 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-ttA/tor Breakdown Voltage (9 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)(;Es/ATJ Temperature Coeif. of Breakdown Voltage - 0.80 - V/UC VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-emitter Saturation Voltage - 2.5 3.3 lc = 17A VGE = 15V
- 3.2 - V Ic = 31A See Fig. 2, 5
- 2.9 - Ic =17A,TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -12 - mV/°C VCE = VGE, lc = 250PA
gfe Forward Transconductance G) 5.2 13 - S VCE = 100V, lc = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 900V
- - 1000 VGE = 0V, VCE = 900V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = iZOV
Switching Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 45 68 lc = 17A
Qge Gate - Emitter Charge (turn-on) - 8.7 13 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 15 23 VGE = 15V
tam) Tum-On Delay Time - 28 - To = 25°C
tr Rise Time - 12 - ns Ic = 17A, Vcc = 720V
td(off) Tum-Off Delay Time - 170 320 VGE = 15V, Rs = lon
tf Fall Time - 110 300 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.52 -
Eoff Turn-Off Switching Loss - 1.05 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 1.57 3.1
tum”) Turn-On Delay Time - 27 - To = 150°C,
tr Rise Time - 14 - ns IC = 17A, Vcc = 720V
tum“) Tum-Off Delay Time - 250 - l/SE = 15V, Rs = lon
tf Fall Time - 240 - Energy losses include "tail"
Ets Total Switching Loss - 3.0 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1200 - VGE = 0V
Coes Output Capacitance - 91 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 15 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20V, L=10pH,
RG=1OQ, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
6) Pulse width 5.0ps,
single shot.
© Pulse width s 80ps; duty factor s: 0.1%.
