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IRGPF30F
900V Discrete IGBT in a TO-3P (TO-247AC) package
International
Features
. Switching-loss rating includes all "tail" losses
I Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency
CU rve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifer have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1026
IRGPF30F
Fast Speed IGBT
VCES = 900V
VCE(sat) S 3.7V
E @VGE=15V,IC=11A
n-channel
current applications.
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 900 V
lc @ To = 25°C Continuous Collector Current 20
lo @ Tc = 100°C Continuous Collector Current 11 A
ICM Pulsed Collector Current (D 40
ILM Clamped Inductive Load Current © 40
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ Tc = 25°C Maximum Power Dissipation 100 W
Pro @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
RSJC Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.24 - °C/W
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPF3OF TOR
Electrical Characteristics © In = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 900 - - V VGE = 0V, Ic = 250PA
V(BR)ECS Emitter-to-Collector Breakdown Voltage (0 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.83 - V/OC VGE = 0V, lc = 1.0mA
Vegan) Collector-to-Emi) Saturation Voltage - 2.6 3.7 k: = 11A VGE = 15V
- 3.3 - V Ic = 20A See Fig. 2, 5
- 2.9 - Ic =11A,To = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mW'C VCE = VGE, lc = 250pA
gfe Forward Transconductance S 3.6 6.9 - S VCE = 100V, Ic = 11A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 900V
- - 1000 VGE = 0V, VCE = 900V, To = 150°C
IGEs Gate-to-Emitter Leakage Current - - i100 nA VGE = SBN
Switching Characteristics @ 1:, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (tum-on) - 22 33 Ic = 11A
Qge Gate - Emitter Charge (tum-on) - 5.1 7.7 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (tum-on) - 8.0 12 VGE = 15V
tam) Turn-On Delay Time - 27 - To = 25°C
tr Rise Time - 9.7 - ns k: = 11A, Vcc = 720V
tann Turn-Off Delay Time - 160 280 VGE = 15V, Rs = 23n
If Fall Time - 140 240 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.33 -
Eoff Turn-Off Switching Loss - 0.67 - mJ See Fig. 9, 10, 11, 14
G Total Switching Loss - 1.0 1.9
tam) Turn-On Delay Time - 27 - T: = 150°C,
tr Rise Time - 12 - ns k: = 11A, Vcc = 720V
td(oit) Turn-Off Delay Time - 260 - VGE = 15V, Rs = 23n
tf Fall Time - 250 - Energy losses include "tail"
Ets Total Switching Loss - 2.0 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 560 - VGE = 0V
Coes Output Capacitance - 50 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.3 - f = 1.0MHz
Notes:
C) Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20V: L=10pH,
Rs-- 239, ( See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width 5.0ps,
single shot.
GD Pulse width 3 80ps,' duty factor 3 0.1%.
