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IRGPH20M ,1200V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
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IRGPC50UD2
600V Copack IGBT in a TO-3P (TO-247AC) package
PD - 9.802A
b'tietttatipoal
ISER Rectifier I RG PC5O U D2
INSULATED GATE BIPOLAR TRANSISTOR UItraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY
Features C
. Switching-loss rating includes all "tail" losses VCES = 600V
. HEXFRED'" soft ultrafast diodes
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve G VcE(sat) C 3.0V
@VGE = 15V, lc = 27A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifer's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-Emi) Voltage 600 V
k: @ To = 25°C Continuous Collector Current 55
lo @ To = 100°C Continuous Collector Current 27
ICM Pulsed Collector Current (D 220 A
ILM Clamped Inductive Load Current © 220
IF @ Tc = 100''C Diode Continuous Forward Current 25
IFM Diode Maximum Forward Current 220
VGE Gate-to-emitter Voltage 1 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 200 W
PD @ Tc = 100''C Maximum Power Dissipation 78
To Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rea; Junction-to-Case - IGBT - - 0.64
ReJC Junction-to-Case - Diode - - 0.83 "C/W
Recs Case-to-Sink, fiat, greased surface - 0.24 -
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 1
|RGPC5OUD2 TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emile Breakdown Voltage © 600 - - V l/ss = 0V, Ic = 250pA
AV(BR)CES/ATJ Temp. Coeff. of Breakdown Voltage - 0.60 - V/°C VGE = 0V, lc = 1.0mA
Vegan) Collector-to-Emi) Saturation Voltage - 1.9 3.0 Ic = 27A VGE = 15V
- 2.4 - V k: = 55A See Fig. 2, 5
- 1.9 - Ic = 27A, TJ = 150°C
Vsatm Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250PA
AVGE(th)/ATJ Temp. Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance © 16 24 - S VCE = 100V, Ic = 27A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 6500 V95 = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.3 1.7 V k: = 25A See Fig. 13
- 1.2 1.5 Ic = 25A, TJ =150°C
IGEs Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 110 140 lc = 27A
Qge Gate - Emitter Charge (turn-on) - 17 21 nC Vcc = 400V
Qgc Gate - Collector Charge (tum-on) - 53 70 See Fig. 8
tdmn) Tum-On Delay Time - 73 - Tu = 25°C
tr Rise Time - 71 - ns IC = 27A, Vcc = 480V
tam) Turn-Off Delay Time - 210 320 VGE = 15V, Rs = 5.09
tf Fall Time - 150 280 Energy losses include "tail" and
Eon Turn-On Switching Loss - 1.4 - diode reverse recovery.
Eoff Turn-Off Switching Loss - 1.6 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 3.0 4.5
Mon) Tum-On Delay Time - 73 - To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 67 - ns IC = 27A, Vcc = 480V
td(off) Turn-Off Delay Time - 360 - VGE = 15V, Rs = 5.09
tt Fall Time - 230 - Energy losses include "tail" and
ES Total Switching Loss - 4.5 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 2900 - VGE = 0V
Coes Output Capacitance - 330 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 40 - f = 1.0MHz
trr Diode Reverse Recovery Time - 50 75 ns TJ = 25°C See Fig.
- 105 160 TJ=125°C 14 |F=25A
Irr Diode Peak Reverse Recovery Current - 4.5 10 A TJ = 25°C See Fig.
- 8.0 15 To = 125°C 15 V R = 200V
Qrr Diode Reverse Recovery Charge - 112 375 nC To = 25''C See Fig.
- 420 1200 To = 125°C 16 di/dt = 200Alps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 250 - Alps To = 25°C See Fig.
During h, - 160 - TJ = 125°C 17
Notes:
C) Repetitive rating; VGE=20V, pulse width © I/cc-io/oil/ces), VGE=20V, L=10pH, © Pulse width 5.0ps,
limited by max. junction temperature.
( See fig. 20 )
Rs-- 5.on, (See fog. 19)
© Pulse width f 80ps; duty factor f 0.1%.
single shot.
