IRGPC40U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC40UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.O-247ACTAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50F ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50FD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50U , Fit Rate / Equivalent Device Hours
IRGPC50UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
ISP1123D ,Universal Serial Bus compound hub
ISP1123D ,Universal Serial Bus compound hub
ISP1123D ,Universal Serial Bus compound hub
ISP1161 ,Full-speed Universal Serial Bus single-chip host and device controller
ISP1161a ,Full-speed Universal Serial Bus single-chip host and device controller
ISP1161A1BM ,ISP1161A1; Universal Serial Bus single-chip host and device controller
IRGPC40U
600V Discrete IGBT in a TO-3P (TO-247AC) package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
I Switching-Ioss rating includes all "tail" losses
. Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at m
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high- /
PD - 9.684A
IRGPC40U
UItraFast IGBT
n-channel
VCES = 600V
VCE(Sat) S 3.0V
@VGE = 15V, IC = 20A
current applications.
(ihit',
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
Vces Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 40
Ic @ To = 100°C Continuous Collector Current 20 A
ICM Pulsed Collector Current C) 160
ILM Clamped Inductive Load Current © 160
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 15 m1
Po @ Tc = 25°C Maximum Power Dissipation 160 W
Po @ Tc = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rac Junction-to-Case - - 0.77
Rocs Case-to-Sink, flat, greased surface - 0.24 - 'C/W
ReJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
Revision 0
IRGPC4OU TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, lc = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 20 - - V VGE = 0V, Ic = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.63 - V/°C I/ss = 0V, lc = 1.0mA
VCE(on) Collector-to-Emi) Saturation Voltage - 2.2 3.0 k: = 20A VGE = 15V
- 2.7 - V k: = 40A See Fig. 2, 5
- 2.3 - Ic = 20A, To = 150°C
Vegan) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGEMIATJ Temperature Coeff. of Threshold Voltage - -13 - mV/oC VCE = VGE, Ic = 250PA
gte Forward Transconductance © 11 18 - S VCE = 100V, lc = 20A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = OV, VCE = 600V
- - 2500 l/GE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emilie, Leakage Current - - A100 nA VGE = 120V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 51 67 Ic = 20A
Qge Gate - Emitter Charge (turn-on) - 8.9 11 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 20 33 VGE = 15V
tdwn) Tum-On Delay Time - 25 - TJ = 25°C
tr Rise Time - 21 - ns Ic = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 96 190 VGE = 15V, Rs = lon
tr Fall Time - 43 120 Energy losses include "tail"
Eon Tum-On Switching Loss - 0.34 -
Eoff Turn-Off Switching Loss - 0.41 - mJ See Fig. 9, 10, 11, 14
ES Total Switching Loss - 0.75 1.6
tam) Tum-On Delay Time - 25 - TJ = 150°C,
tr Rise Time - 23 - ns k: = 20A, Vcc = 480V
tam) Turn-Off Delay Time - 174 - VGE = 15V, Rs = lon
tr Fall Time - 140 - Energy losses include "tail"
Ets Total Switching Loss - 1.4 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 1500 - VGE = 0V
Coes Output Capacitance - 190 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 17 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© Vcc=80%(VcEs), 1/GE=20V, L=10pH,
RG=1OQ, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
S Pulse width 5.0ps,
single shot.
(ii) Pulse width f 80ps; duty factor 3 0.1%.
