IRGPC40KD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC40UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.O-247ACTAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50F ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50FD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC50U , Fit Rate / Equivalent Device Hours
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IRGPC40KD2
600V Copack IGBT in a TO-3P (TO-247AC) package
lhteripatipoal PD-9.1114
rem Rectifier IRGPC40KD2
llNlSULATEDGATEBlPOLARTRANSlSTOR ShortCircuitRated
WITH ULTRAFAST SOFT RECOVERY DIODE UItraFast CoPack IGBT
Features C
. Short circuit rated -10ps @125°C, VGE = 15V VCES = 600V
. Switching-Ioss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes VCE t < 3 2V
. Optimized for high operating frequency (over 5kHz) G (sa ) _ .
See Fig. 1 for Current vs. Frequency curve
@VGE = 15V, Ic = 25A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifer's well _ ©
known IGBT line. They provide the convenience of an IGBT and an ultrafast '
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control ////
and other applications requiring short circuit withstand capability.
Absolute Maximum Ratings TO 247AC
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 42
lc @ Tc = 100°C Continuous Collector Current 25
IcM Pulsed Collector Current C) 84 A
ILM Clamped Inductive Load Current © 84
IF @ TC = 100°C Diode Continuous Foward Current 15
IFM Diode Maximum Forward Current 84
tsc Short Circuit VWthstand Time 10 us
VGE Gate-to-Emitter Voltage 1 20 V
Po @ TC = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 1O Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 0.77
ReJC Junction-to-Case - Diode ------------ 1.7 "CIW
Recs Case-to-Sink, flat, greased surface - 0.24 -
' Junction-to-Ambient, typical socket mount _-__--- 40
Wt Weight ------ 6 (0.21) ------ g (oz)
IRGPC40KD2 TOR
Electrical Characteristics © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage@ 600 - - V VGE = 0V, k: = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/''C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.1 3.2 IO = 25A VGE = 15V
- 2.8 - V k: = 42A See Fig. 2, 5
- 2.5 - Ic = 25A, T: = 150°C
VGE(lh) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250PA
AN/auth/ATO Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, lc = 250PA
gfe FonNard Transconductance © 7.0 14 ---- S VCE = 100V, lc = 25A
ICES Zero Gate Voltage Collector Current ---- - 250 pA VGE = 0V, VCE = 600V
- - 3500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop ---- 1.3 1.7 V k: = 15A See Fig. 13
- 1.2 1.6 Ic =15A,TJ = 150°C
Kass Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 61 92 lc = 25A
Qqe Gate - Emitter Charge (turn-on) ---- 13 19 nC Vcc = 400V
Qqc Gate - Collector Charge (turn-on) -- 22 33 See Fig. 8
1mm Turn-On Delay Time ---- 72 ---- TJ = 25°C
tr Rise Time ---- 90 ---- ns Ic = 25A, Vcc = 480V
tdwm Turn-Off Delay Time ---- 170 250 VGE = 15V, Rs = lon
tf FallTime ---- 140 220 Energy losses include "tail" and
Ed, Turn-On Switching Loss ---- 1.5 - diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 1.5 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss - 3.0 4.2
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, TJ = 125°C
VGE = 15V, Rs = Ion, VcPK < 500V
tam) Turn-On Delay Time ---- 70 ---- To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 86 ---- ns Ic = 25A, Vcc = 480V
td(otr) Turn-Off Delay Time - 280 - VGE = 15V, Rs = lon
t, FallTime - 270 - Energy losses include "tail" and
Ets Total Switching Loss - 4.2 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance ---- 1500 ---- VGE = 0V
Goes Output Capacitance - 190 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 17 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns TJ = 25°C See Fig.
---- 74 120 TJ = 125°C 14 IF = 15A
In Diode Peak Reverse Recovery Current - 4.0 6.0 A To = 25°C See Fig.
- 6.5 10 To = 125°C 15 VR = 200V
G, Diode Reverse Recovery Charge ---- 80 180 nC To = 25°C See Fig.
- 220 600 TJ = 125°C 16 di/dt = 200A/
us d (rec)M/ itDiode Pea Rate t f Fall of Recovery - 188
- Alps To = 25°C See Fi . During tr, - 160
Notes: Tu --1iW%c--8dg(vcEs), VGE=20V, L=10pH, © Pulse width 5.0ps,
co Repetitive rating; VGE=20V, pulse width limited Rs-- Ion, (See fig. 19) single shot.
by max. junction temperature. ( See ftg. 20 )
© Pulse width 5 80ps; duty factor 3 0.1%.
