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IRGPC30UD2
600V Copack IGBT in a TO-3P (TO-247AC) package
lhteripatipoal PD-9.1112
rem Rectifier IRGPC30U D2
INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY DIODE
Fe at u res C
. Switching-loss rating includes all "tail" losses VcEs=600V
. HEXFREDTM soft ultrafast diodes
. Optimized for high operating frequency (over 5kHz) V < 3 0V
See Fig. 1 for Current vs. Frequency curve G CE(sat) _ .
@VGE =15V, Ic = 12A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifler's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motorcontrol, UPS and powersupply applications.
TO -2 4 7A C
Absolute Maximum Ratings
Parameter Max. Units
I/ces Collector-to-Emitter Voltage 600 V
k: @ Tc = 25°C Continuous Collector Current 23
Ic @ Tc = 100°C Continuous Collector Current 12
ICM Pulsed Collector Current OD 92 A
ILM Clamped Inductive Load Current © 92
IF @ Tc = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 92
VGE Gate-to-Emitter Voltage , 20 V
PD @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. IO Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 1.2
ReJC Junction-to-Case - Diode ------------ 2.5 "CIW
Recs Case-to-Sink, flat, greased surface - 0.24 -
' Junction-to-Ambient, typical socket mount _-__--- 40
Wt Weight ------ 6 (0.21) - g (oz)
IRGPC30UD2 TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage@ 600 ---- ---- V VGE = 0V, lc = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Volta_ 0.63 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage 2.2 3.0 Ic = 12A VGE = 15V
2.7 - V lc = 23A See Fig. 2, 5
2.4 - k: = 12A, Tu = 150°C
VGE(th) Gate Threshold Voltage - 5.5 VCE = VGE, Ic = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Volta_ -11 ---- mV/°C VCE = VGE, k: = 250pA
gfe Forward Transconductance © 8.6 ---- S VCE = 100V, lc = 12A
Ices Zero Gate Voltage Collector Current - 250 pA VGE = 0V, VCE = 600V
- 2500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop 1.4 1.7 V Ic = 12A See Fig. 13
1.3 1.6 Ic=12A,Tu=1500C
legs Gate-to-Emitter Leakage Current ---- A100 nA VGE = i20V
Switching Characteristics (ii) T J = 25°C (unless otherwise specified)
Parameter Typ. Max. Units Conditions
% Total Gate Charge (turn-on) 29 36 Ic = 12A
Qge Gate - Emitter Charge (turn-on) 4.8 6.8 nC Vcc = 400V
Qgc Gate - Collector Charge (turn-on) 12 17 See Fig. 8
tum) Turn-On Delay Time 67 - T: = 25°C
tr Rise Time 56 'rp-V ns IC = 12A, Vcc = 480V
td(off) Turn-Off Delay Time 170 250 VGE = 15V, RG = 239
tr FalITime 140 270 Energy losses include "tail" and
Ed, Turn-On Switching Loss 0.70 - diode reverse recovery.
Eott Turn-Off Switching Loss 0.80 ---- rnJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss 1.5 2.5
lawn) Turn-On Delay Time 61 - TJ = 150°C, See Fig. 9, 10, 11, 18
t, Rise Time 51 ---- ns Ic = 12A, Vcc = 480V
truoto Turn-Off Delay Time 190 ---- VGE = 15V, RG = 239
h FalITime 190 - Energy losses include "tail" and
Ets Total Switching Loss 1.9 - mJ diode reverse recovery.
LE Internal Emitter Inductance 13 - nH Measured 5mm from package
Cies Input Capacitance 680 - VGE = 0V
Goes Output Capacitance 110 - pF Vcc = 30V See Fig. 7
Ores Reverse Transfer Capacitance 11 - f = 1.0MHz
trr Diode Reverse Recovery Time 42 60 ns To = 25°C See Fig.
80 120 To = 125°C 14 IF = 12A
lrr Diode Peak Reverse Recovery Current 3.5 6.0 A To = 25°C See Fig.
5.6 10 TJ =125°C 15 VR = 200V
Q,, Diode Reverse Recovery Charge 80 180 nC T J = 25°C See Fig.
220 600 TJ = 125°C 16 di/dt = 200A/
us d tDiode Pea Rate ( f Fall of Recovery - 180
- Alps To = 25 ee Fig. During tb ---- 120
Notes: T: = 125°C 17
(D Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See Ftg. 20 )
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 239, (See Fig. 19)
© Pulse width 3 80ps; duty factor f 0.1%.
© Pulse width 5.0ps,
single shot.
