IRGPC30K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC30U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.Absolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitter Volta ..
IRGPC30UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO -2 47ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emi ..
IRGPC40K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40KD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGPC30K
600V Discrete IGBT in a TO-3P (TO-247AC) package
Ilnternational
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Short circuit rated - 10ps @ 125°C, VGE = 15V
. Switching-loss rating includes all "tail" losses
. Optimized for high operating frequency (over
See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
PD - 9.1075
IRGPCBOK
Short Circuit Rated
UltraFast IGBT
n-channel
VCES = 600V
VCE(sat) f 3.8V
@VGE =15V,lc =14A
the same time having simpler gate-drive requirements of the familiar power aitit
MOSFET. They provide substantial benehts to a host of high-voltage, high-
current applications. P
These new short circuit rated devices are especially suited for motor control ////
and other applications requiring short circuit withstand capability.
TO -2 4 7 A C
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 23
lc @ Tc = 100°C Continuous Collector Current 14 A
ICM Pulsed Collector Current (D 46
ILM Clamped Inductive Load Current © 46
tsc Short Circuit Nthstand Time 10 us
VGE Gate-to-Emitter Voltage t20 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ TC = 25°C Maximum Power Dissipation 100 W
Pro @ Tc = 100°C Maximum Power Dissipation 42
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
RGJC Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.24 - "CNV
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
IRGPC30K TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 20 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.30 - V/°C VGE = 0V, Ic = 1.0mA
VCEW.) Collector-to-Emitter Saturation Voltage - 2.5 3.8 k: = 14A VGE = 15V
- 3.3 - V k: = 23A See Fig. 2, 5
- 2.5 - Ic =14A,TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, k: = 250PA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -13 - mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance s 3.3 6.5 - S VCE = 100V, Ic = 14A
ICES Zero Gate Voltage Collector Current - - 600 pA VGE = 0V, VCE = 600V
- - 1100 V95 = 0V, ch = 600V, TJ = 150°C
IGES Gate-to-Emi) Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q, Total Gate Charge (turn-on) - 39 58 Ic = 14A
' Gate - Emitter Charge (turn-on) - 8.7 13 nC Vcc = 400V See Fig. 8
Qac Gate - Collector Charge (turn-on) - 15 23 VGE = 15V
td(on) Turn-On Delay Time - 31 - To = 25''C
tr Rise Time - 23 - ns lc = 14A, Vcc = 480V
tdwm Turn-Off Delay Time - 100 150 VGE = 15V, RG = 239
tr Fall Time - 84 130 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.3 -
Eoff Turn-Off Switching Loss - 0.3 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 0.6 0.9
tsc Short Circuit VWthstand Time 10 - - us Vcc = 360V, T J = 125°C
VGE = 15V, Rs = 239, VCPK < 500V
tam) Turn-On Delay Time - 30 - To = 150°C,
tr Rise Time - 23 - ns k: = 14A, Vcc = 480V
td(off) Turn-Off Delay Time - 170 - VGE = 15V, Rs = 23n
If Fall Time - 170 - Energy losses include "tail"
Ets Total Switching Loss - 1.4 - mJ See Fig. IO, 14
Ls Internal Emitter Inductance - 13 - nH Measured 5mm from package
Cies Input Capacitance - 740 - VGE = 0V
Goes Output Capacitance - 92 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 9.4 - f = 1.0MHz
Notes:
oo Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(Seeftg. 13b)
C) Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 239, (See Fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
co Pulse width s: 80ps; duty factor S 0.1%.
