IRGPC30F ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC30K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC30U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.Absolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitter Volta ..
IRGPC30UD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO -2 47ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emi ..
IRGPC40K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC40KD2 ,600V Copack IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
ISP1122NB ,Universal Serial Bus stand-alone hub
ISP1122NB ,Universal Serial Bus stand-alone hub
ISP1123BD ,Universal Serial Bus compound hub
ISP1123BD ,Universal Serial Bus compound hub
ISP1123D ,Universal Serial Bus compound hub
ISP1123D ,Universal Serial Bus compound hub
IRGPC30F
600V Discrete IGBT in a TO-3P (TO-247AC) package
Ilnternational
Rectifier
PD - 9.1023
IRGPC30F
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
Fast Speed IGBT
n-channel
VCES = 600V
VCE(sat) f 2.1V
@VGE =15V,lc =17A
higher usable current densities than comparable bipolar transistors, while at m
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications. ////
TO -2 47 AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 31
lc @ Tc = 100°C Continuous Collector Current 17 A
ICM Pulsed Collector Current (D 120
ILM Clamped Inductive Load Current © 120
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
Po @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 lbf-in (1 .1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
RGJC Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.24 - "CNV
RQJA Junction-to-Ambient, typical socket mount - - 40
Wt Weight - 6 (0.21) - g (oz)
IRGPC30F TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max Units Conditions
V(BR)css Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage © 20 - - V VGE = 0V, k: = 1.0A
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.69 - V/°C VGE = 0V, Ic = 1.0mA
VCE(Dn) Collector-to-Emitter Saturation Voltage - 1.8 2.1 Ic = 17A VGE = 15V
- 2.4 - V k: = 31A See Fig. 2, 5
- 2.2 - k: = 17A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance s 6.1 10 - S VCE = 100V, Ic = 17A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 V95 = 0V, VCE = 600V, TJ = 150''C
IGES Gate-to-Emote, Leakage Current - - i100 nA VGE = 120V
Switching Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qu Total Gate Charge (turn-on) - 27 30 k: = 17A
Qge Gate - Emitter Charge (turn-on) - 4.1 5.9 nC Vcc = 400V See Fig. 8
Qar: Gate - Collector Charge (turn-on) - 12 15 V35 = 15V
td(on) Turn-On Delay Time - 25 - TJ = 25°C
tr Rise Time - 21 - ns Ic = 17A, Vcc = 480V
tdmm Turn-Off Delay Time - 210 320 VGE = 15V, Rs = 239
tr Fall Time - 300 500 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.30 -
Eoff Turn-Off Switching Loss - 2.1 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 2.4 3.5
tdmn) Turn-On Delay Time - 25 - T, = 150°C,
tr Rise Time - 21 - ns Ic = 17A, Vcc = 480V
tam) Turn-Off Delay Time - 290 - VGE = 15V, Rs = 23n
tr Fall Time - 590 - Energy losses include "tail"
Ets Total Switching Loss - 3.6 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 670 - VGE = 0V
Coes Output Capacitance - 100 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 10 - f = 1.0MHz
Notes:
oo Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(Seeftg. 13b)
C) Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 239, (See Fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
co Pulse width s: 80ps; duty factor S 0.1%.
