IRGP50B60PD1PBF ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
IRGP50B60PDPBF ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageApplicationsTO-247AC• Lower Conduction Losses and Switching Losses• Higher Switching Frequency up t ..
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IRGP50B60PD1PBF
600V Warp2 150kHz Copack IGBT in a TO-247AC package
International SMPs IGBT PD - 95330A
1ng Rectifier IRG P50B60PD1 PbF
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(0n) typ. = 2.00V
. Telecom and Server SMPS ' @ VGE = 15V lc = 33A
. PFC and ZVS SMPS Circuits
. Uninterruptable Power Supplies Equivalent MOSFET
o EondSllimer Electronics PowerSupplies G " Parametersc)
F ea ree E RCE(on) typ. = 61mg
eatures .-. . . ID (FET equivalent) = 50A
. NPT Technology, Positive Temperature Coefficient n-channel
. Lower VCE(SAT)
. Lower Parasitic Capacitances
0 Minimal Tail Current
0 HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
o Tighter Distribution of Parameters
I Higher Reliability ‘E
Benefits G
. Parallel Operation for Higher Current Applications
. Lower Conduction Losses and Switching Losses T0-247AC
0 Higher Switching Frequency up to 150kHz
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emir Voltage 600 V
Ic @ TC = 25°C Continuous Collector Current 75
IC @ To = 100°C Continuous Collector Current 45
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current co 150 A
IF © To = 25°C Diode Continous Forward Current 40
IF @ To = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current © 60
Vas Gate-to-Emitter Voltage t20 V
PD @ TC = 25°C Maximum Power Dissipation 390 W
PD @ To = 100°C Maximum Power Dissipation 156
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RM; (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) - - 0.32 °C/W
Rm (Diode) Thermal Resistance Junction-to-Case-(each Diode) - - 1.7
Recs Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.24 -
RNA Thermal Resistance, Junction-to-Ambient (typical socket mount) - - 40
Weight -- 6.0 (0.21) -- g (oz)
1
7/25/08
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IRGP50B60PD1PbF
International
TOR Rectifier
Electrical Characteristics @ T, = 25°C (unless otherwise s oecified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V l/ms = 0V, IC = 500pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.31 - V/°C l/ms = 0V, Ic = 1mA (25°C-125°C)
Re Internal Gate Resistance - 1.7 - Q 1MHz, Open Collector
- 2.00 2.35 k: = 33A, VGE = 15V 4, 5,6,8,9
Vegan) Collector-to-Emit‘ter Saturation Voltage - 2.45 2.85 V IC = 50A, Vas = 15V
- 2.60 2.95 k: = 33A, Vss = 15V, T, = 125°C
- 3.20 3.60 IC = 50A, Vas =15V,TJ = 125°C
Vas(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250pA 7,8,9
AVGEuh/ATJ Threshold Voltage temp. coefficient - -1O - mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance - 41 - S VCE = 50V, Ic = 33A, PW = Sous
ICES Collector-to-Emitter Leakage Current - 5.0 500 pA l/ss = 0V, VCE = 600V
- 1.0 - mA l/se = 0V, l/cs = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop - 1.30 1.70 V IF = 15A, Vas = ov 10
- 1.20 1.60 IF=15A, VaE--0V,Ts--125'C
IGES Gate-to-Emitter Leakage Current - - 1100 nA Veg = 120V, VCE = 0V
Switching Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
09 Total Gate Charge (turn-on) - 205 308 k, = 33A 17
Qgc Gate-to-Collector Charge (turn-on) - 70 105 nC Vcc = 400V CTI
Qge Gate-to-Emitter Charge (turn-on) - 30 45 VGE = 15V
Eon Turn-On Switching Loss - 255 305 lc = 33A, Vcc = 390V CT3
Es, Turn-Off Switching Loss - 375 445 pJ VGE = +15V, Rs = 3.39, L = 200pH
Em. Total Switching Loss - 630 750 TJ = 25°C ©
Lon) Turn-On delay time - 30 40 IC = 33A, Vcc = 390V CT3
t, Rise time - 10 15 ns l/ms = +15V, Re = 3.39, L = 200pH
tdwm Turn-Off delay time - 130 150 T, = 25°C Cr)
t, Fall time - 11 15
Eon Turn-On Switching Loss - 580 700 IC = 33A, Vcc = 390V CT3
Es, Turn-Off Switching Loss - 480 550 pJ l/se = +15V, Rs = 3.39, L = 200pH 11,13
E10151 Total Switching Loss - 1060 1250 T, = 125°C © WF1,WF2
tum") Turn-On delay time - 26 35 lo = 33A, Vcc = 390V CT3
t, Rise time - 13 20 ns VGE = +15V, Rs = 3.39, L = 200pH 12,14
tam) Turn-Off delay time - 146 165 T: = 125°C © WF1,WF2
t, Fall time - 15 20
Cies Input Capacitance - 3648 - l/ss = OV 16
CDes Output Capacitance - 322 - Vcc = 30V
Cres Reverse Transfer Capacitance - 56 - pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related) s - 215 - VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Energy Related) © - 163 -
T: =150°C, lc = 150A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 480V, Vp =600V CT2
Rg = 229, l/ss = +15V to 0V
trr Diode Reverse Recovery Time - 42 60 ns T, = 25°C IF: 15A, I/n = 200V, 19
- 74 120 T, = 125°C di/dt = 200A/us
a,, Diode Reverse Recovery Charge - 80 180 nC T: = 25°C IF: 15A, VR = 200V, 21
- 220 600 T J = 125°C di/dt = 200A/ps
l,, Peak Reverse Recovery Current - 4.0 6.0 A T, = 25°C IF: 15A, l/n = 200V, 19,20,21,22
- 6.5 10 T, = 125°C di/dt = 200A/ps CT5
Notes:
CD RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ Ic, where VCE(on) typ.= 2.00V and Ic =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating © 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
© Vcc = 80% (chs), Vas =15V, L = 28 pH, Rs = 22 Q.
© Pulse width limited by max. junction temperature.
60 Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
© Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from O to 80% I/css.
COBS eff.(ER) is a fixed capacitance that stores the same energy as CDes while VCE is rising from 0 to 80% VCES,
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