IRGP50B60PD1 ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
IRGP50B60PD1PBF ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
IRGP50B60PDPBF ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageApplicationsTO-247AC• Lower Conduction Losses and Switching Losses• Higher Switching Frequency up t ..
IRGPC30F ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGPC30K ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications requiring short circuit withstand capability.TO-247ACAbsolute Maximum Ratings ..
IRGPC30U ,600V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.Absolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitter Volta ..
ISP1122BD ,Universal Serial Bus stand-alone hub
ISP1122NB ,Universal Serial Bus stand-alone hub
ISP1122NB ,Universal Serial Bus stand-alone hub
ISP1123BD ,Universal Serial Bus compound hub
ISP1123BD ,Universal Serial Bus compound hub
ISP1123D ,Universal Serial Bus compound hub
IRGP50B60PD1
600V Warp2 150kHz Copack IGBT in a TO-247AC package
International PD 94625A
TaR Rectifier SMPS IGBT IRGP50B60PD1
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Applications VCE(on) typ. = 2.00V
. Telecom and Server SMPS ' @ VGE = 15V lc = 33A
. PFC and ZVS SMPS Circuits
. Uninterruptable Power Supplies Equivalent MOSFET
. Consumer Electronics Power Supplies G " Parametersc)
Features E Roam) ty.p. = 61mQ
... . ID (FET equivalent) = 50A
. NPT Technology, Positive Temperature Coemcient n-channel
. Lower VcE(SAT)
. Lower Parasitic Capacitances
. Minimal Tail Current _
. HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode ' ‘_ v,si"it,r,.s,
. Tighter Distribution of Parameters t(cj'ie)-ia:
. Higher Reliability 't f" 'E
Benefits G
. Parallel Operation for Higher Current Applications
. Lower Conduction Losses and Switching Losses TO-247AC
. Higher Switching Frequency up to 150kHz
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ TC = 25°C Continuous Collector Current 75
Ic @ To = 100°C Continuous Collector Current 45
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current © 150 A
IF @ TC = 25°C Diode Continous Forward Current 40
IF @ Tc = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current © 60
VGE Gate-to-Emitter Voltage 120 V
Pro @ TC = 25°C Maximum Power Dissipation 390 W
PD @ TC = 100°C Maximum Power Dissipation 156
T: Operating Junction and -55 to +150
Tsm Storage Temperature Range ''C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rm (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) - - 0.32 "C/W
ROJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) - - 1.7
Recs Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.24 -
RNA Thermal Resistance, Junction-to-Ambient (typical socket mount) - - 40
Weight - 6.0 (0.21) - g (oz)
1
12/15/03
IRGP50B60PD1
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise s pecified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, k: = 500pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.31 - V/“C VGE = 0V, k: = 1mA (25°C-125°C)
Rs Internal Gate Resistance - 1.7 - Q 1MHz, Open Collector
- 2.00 2.35 lc = 33A, Vas = 15V 4, 5,6,8,9
chm Collector-to-Emitter Saturation Voltage - 2.45 2.85 V lc = 50A, VGE = 15V
- 2.60 2.95 IC = 33A, VGE = 15V, T, = 125°C
- 3.20 3.60 Ic = 50A, VGE = 15V, T, = 125°C
VGE(m) Gate Threshold Voltage 3.0 4.0 5.0 V lc = 250PA 7,8,9
AVGE(,h)/ATJ Threshold Voltage temp. coefficient - -10 - mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance - 41 - S VCE = 50V, k: = 33A, PW = 80ps
Ices Collector-to-Emi) Leakage Current - 5.0 500 pA VGE = 0V, VCE = 600V
- 1.0 - mA VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop - 1.30 1.70 V IF = 15A, VGE = ov 10
- 1.20 1.60 IF = 15A, VGE = 0V, T, =125°C
IGES Gate-to-Emi) Leakage Current - - i100 nA VGE = 120V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
09 Total Gate Charge (turn-on) - 205 308 Ic = 33A 17
Qgc Gate-to-Collector Charge (turn-on) - 70 105 nC Vcc = 400V CT1
Qge Gate-to-Emir Charge (turn-on) - 30 45 VGE = 15V
E0n Turn-On Switching Loss - 255 305 lc = 33A, Vcc = 390V CT3
' Turn-Off Switching Loss - 375 445 pJ VGE = +15V, Rs = 3.39, L = 200pH
Etoial Total Switching Loss - 630 750 T J = 25°C (C)
tam”) Turn-On delay time - 30 40 k, = 33A, Vcc = 390V CT3
tr Rise time - 10 15 ns VGE = +15V, Rs = 3.39, L = 200pH
tum) Turn-Off delay time - 130 150 T: = 25°C ©
t, Fall time - 11 15
Eon Turn-On Switching Loss - 580 700 lc = 33A, Vcc = 390V CT3
Eoff Turn-Off Switching Loss - 480 550 pJ VGE = +15V, Rs = 3.39, L = 200pH 11,13
Etotal Total Switching Loss - 1060 1250 T: = 125°C (9 WF1,WF2
tdon) Turn-On delay time - 26 35 lc = 33A, Vcc = 390V cm
tr Rise time - 13 20 ns VGE = +15V, Rs = 3.39, L = 200pH 12,14
tdwm Turn-Off delaytime - 146 165 T: = 125°C © WF1,WF2
t, Fall time - 15 20
Cies Input Capacitance - 3648 - VGE = 0V 16
CDes Output Capacitance - 322 - Vac = 30V
Cres Reverse Transfer Capacitance - 56 - pF f= 1Mhz
Coes eff. Effective Output Capacitance (Time Related) s - 215 - I/se = 0V, VCE = 0V to 480V 15
coes ett. (ER) Effective Output Capacitance (Energy Related) © - 163 -
To=150''C,lc = 150A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 480V, Vp =600V CT2
Rg = 229, VGE = +15V to 0V
trr Diode Reverse Recovery Time - 42 60 ns T: = 25°C IF = 15A, VR = 200V, 19
- 74 120 T: = 125°C di/dt = 200A/ps
0,, Diode Reverse Recovery Charge - 80 180 nC T: = 25°C IF = 15A, VR = 200V, 21
- 220 600 To = 125°C di/dt = 200/Ups
l, Peak Reverse Recovery Current - 4.0 6.0 A T: = 25°C IF = 15A, VR = 200V, 19,20,21,22
- 6.5 10 T: = 125°C di/dt = 200A/ps CT5
Notes:
CD RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ Ic, where VcE(on) typ.= 2.00V and k: =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
© Vcc = 80% (VCEs), VGE =15V, L = 28 pH, Rs = 22 Q.
© Pulse width limited by max. junction temperature.
© Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
© Coes eff. is a fDted capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% Vcss.
Goes eff.(ER) is a fixed capacitance that stores the same energy as CDes while VCE is rising from O to 80% VCES-
