IRGP440UD2 ,500V Copack IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGP450U ,500V Discrete IGBT in a TO-3P (TO-247AC) packageapplications.TO-247ACAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGP50B60PD ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
IRGP50B60PD1 ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
IRGP50B60PD1PBF ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
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IRGP440UD2
500V Copack IGBT in a TO-3P (TO-247AC) package
C-641
IRGP440UD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Thermal Resistance
DescriptionCo-packaged IGBTs are a natural extension of International Rectifier's wellknown IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host ofhigh-voltage, high-current, motor control, UPS and power supply applications.
UltraFast CoPack IGBT
PD - 9.1064
Absolute Maximum RatingsRevision 1
C-642
IRGP440UD2
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Notes:
C-643
Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental)
Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer CharacteristicsIRGP440UD2
f, Frequency (kHz)
C-644
Fig. 5 - Collector-to-Emitter Voltage vs.Case Temperature
Fig. 4 - Maximum Collector Current vs.Case Temperature
IRGP440UD2
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-645
IRGP440UD2
Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. GateResistance
Fig. 10 - Typical Switching Losses vs.Case Temperature
itc
R , Gate Resistance (Ω)
-60-40-20020406080100120140160T , Case Temperature (°C)
l S
C-646
Fig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward CurrentIRGP440UD2
itc
I , Collector-to-Emitter Current (A)
Forward Voltage Drop - V (V)