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IRGP430U
500V Discrete IGBT in a TO-3P (TO-247AC) package
Ilnternational
Rectifier
PD - 9.780
IRGP430U
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-Ioss rating includes all "tail" losses
. Optimized for high operating frequency (over
See Fig. 1 for Current vs. Frequency
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
UltraFast IGBT
n-channel
VCES = 500V
VCE(sat) f 3.0V
@VGE =15V,lc = 15A
while at the same time having simpler gate-drive requirements of the m
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications. ////
TO -2 4 7 A C
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 500 V
Ic @ Tc = 25''C Continuous Collector Current 25
lc @ Tc = 100°C Continuous Collector Current 15 A
ICM Pulsed Collector Current OD 50
ILM Clamped Inductive Load Current © 50
l/GE Gate-to-Emitter Voltage I20 V
EARV Reverse Voltage Avalanche Energy © 10 m]
Po @ Tc = 25°C Maximum Power Dissipation 100 W
PD @ TC = 100°C Maximum Power Dissipation 42
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range (
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RGJC Junction-to-Case ------------ 1.2
Recs Case-to-Sink, flat, greased surface - 0.24 - "CM/
RQJA Junction-to-Ambient, typical socket mount ———————————— 40
Wt Weight - 6 (0.21) - 9 (oz)
IRG P430U TOR
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 500 - - V VGE = 0V, Ic = 250pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage i) 20 ---- - V VGE = 0V, IC = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Volta e---- 0.46 ---- V/°C VGE = 0V, lc = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage ---- 2.3 3.0 lc = 15A VGE = 15V
---- 2.8 ---- V Ic = 25A See Fig. 2, 5
- 2.6 - Ic = 15A, Tu = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, IC = 250PA
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, Ic = 250PA
gfe Forward Transconductance s 2.3 8.1 - S VCE-- 100V, k: = 15A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 500V
- - 1000 VGE = 0V, VCE = 500V, TJ = 150°C
Kass Gate-to-Emitter Leakage Current ---- - i100 nA VGE = 120V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 31 47 k: = 15A
Qge Gate - Emitter Charge (turn-on) ---- 6.2 9.3 nC Vcc = 400V See Fig. 8
(U, Gate - Collector Charge (turn-on) ---- 12 19 V35 = 15V
td(on) Turn-On Delay Time ---- 29 - TJ = 25°C
t, Rise Time ---- 11 ---- ns Ic = 15A, Vcc = 400V
tsom Turn-Off Delay Time ---- 91 160 VGE = 15V, Rs = 239
tf FalITime - 66 120 Energy losses include "tail"
Ed, Turn-On Switching Loss ---- 0.24 ----
Eoff Turn-Off Switching Loss - 0.17 - rnJ See Fig. 9, 10, 11, 14
ES Total Switching Loss - 0.41 0.61
tdmn) Turn-On Delay Time - 13 ---- T, = 150°C,
tr Rise Time ---- 27 ---- ns Ic = 15A, Vcc = 400V
td(0ff) Turn-Off Delay Time ---- 130 ---- VGE = 15V, Rs = 239
tr FaIITime - 130 - Energy losses include "tail"
Ets Total Switching Loss - 0.76 - mJ See Fig. IO, 14
LE Internal Emitter Inductance tpt.-- 13 - nH Measured 5mm from package
Cies Input Capacitance - 660 - VGE = 0V
Goes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 12 - f = 1.0MHz
Notes:
oo Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See ftg. 13b)
C) Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 239, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
(9 Pulse width 5.0ps,
single shot.
co Pulse width S 80ps; duty factor f 0.1%.
