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IRGP4086
300V Plasma Display Panel (PDP) IGBT Switch in a TO-247AC package
PD - 97132
IRGP4086PbF
International
TOR, Rectifier
PDP TRENCH IGBT
Features . Key Parameters
q Advanced Trench IGBT Technology VCE mm 300 V
. Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 70A 1.90 V
Circuits in PDP Applications lm, max @ Tc= 25°C co 250 A
. Low VCE(on) and Energy per Pulse (EPULSETM) T max 150 °C
for Improved Panel Efficiency J
. High Repetitive Peak Current Capability
q Lead Free Package C
G u, C
n-channel TO-247AC
Gate Collector Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
VGE Gate-to-Emitter Voltage :30 V
IC @ To = 25°C Continuous Collector Current, I/ss @ 15V 70 A
lc @ To = 100°C Continuous Collector, Vas @ 15V 40
lm, @ To = 25°C Repetitive Peak Current co 250
PD @TC = 25°C Power Dissipation 160 W
PD @TC = 100°C Power Dissipation 63
Linear Derating Factor 1.3 W/°C
T, Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
ROJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) C) - 0.8
Recs Case-to-Sink (flat, greased surface) 0.24 - °C/W
Rm Junction-to-Ambient (typical socket mount) © - 40
Weight 6.0 (0.21) - g (oz)
1
4/17/08
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IRGP4086PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Volta 300 - - V VGE = 0V, ICE = 1 mA
ABVCES/ATJ Breakdown Voltage Temp. Coefficien - 0.29 - VPC Reference to 25°C, ICE = 1mA
- 1.29 1.46 Vss = 15V, ICE = 25A ©
- 1.49 1.67 Vss = 15V, ICE = 40A ©
Vcaon) Static Collector-to-Emitter Voltage - 1.90 2.10 V Vas = 15V, Ice = 70A ©
- 2.57 2.96 I/ss = 15V, ICE = 120A ©
- 2.27 - Vss = 15V, ICE = 70A, Tu = 150°C
Vegan) Gate Threshold Voltage 2.6 - 5.0 V Vce = Vas, ICE = 500PA
AVGE(,h)/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
ICES Collector-to-Emir Leakage Current - 2.0 25 pA VCE = 300V, VGE = 0V
- 5.0 - VCE = 300V, VGE = 0V, T, = 100°C
- 100 - VCE = 300V, Vas = 0V, To = 150°C
lass Gate-to-Emitter Forward Leakage - - 100 nA l/ss = 30V
Gate-to-Emitter Reverse Leakage - - -100 VGE = -30V
gfe Forward Transconductance - 29 - S VCE = 25V, '05 = 25A
Q, Total Gate Charge - 65 - nC VCE = 200V, k; = 25A, Vas = 15V©
Qgc Gate-to-Collector Charge - 22 -
tdmn) Turn-On delay time - 36 - IC = 25A, Vcc = 196V
t, Rise time - 31 - ns Re = 109, L=200pH, LS: 200nH
td(ott) Turn-Off delay time - 112 - T J = 25°C
t, Fall time - 65 -
tdon) Turn-On delay time - 30 - IO = 25A, Vcc = 196V
t, Rise time - 33 - ns Rs = 109, L=200pH, Ls-- 200nH
tom Turn-Off delay time - 145 - T J = 150°C
t, Fall time - 98 -
tst Shoot Through Blocking Time 100 - - ns VCC = 240V, Vas = 15V, Rs-- 5.19
L = 220nH, C= 0.40pF, vGE =15V
EPULSE Energy per Pulse - 1075 - pJ Vcc = 240V, Re: 5.19, T] = 25°C
L = 220nH, C-- 0.40pF, Vss =15V
- 1432 - Vcc = 240V, Re: 5.1g, TJ = 100°C
Ciss Input Capacitance - 2250 - Vas = 0V
Coss Output Capacitance - 110 - pF VCE = 30V
C,ss Reverse Transfer Capacitance - 58 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 5.0 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 13 - from package
and center of die contact
Notes:
CO Half sine wave with duty cycle = 0.1, ton=2psec.
© Ro is measured at To of approximately 90°C.
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© Pulse width 3 400ps; duty cycle 3 2%.
