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IRGP4085DPBF
330V UltraFast Copack Plasma Display Panel Trench IGBT in a TO-247AC package
International
TOR Rectifier
Features
. Advanced Trench IGBT Technology
. Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
. Low VCE(on) and Energy per Pulse (EPULSETM)
for Improved Panel Efficiency
. High Repetitive Peak Current Capability
q Lead Free Package
Description
PDP TRENCH IGBT
PD - 97286
IRG P4085DPbF
Key Parameters
VCE min 330 V
VCE(ON) typ. @ lc = 70A 1.69 V
IRP max @ TC: 25°C co 250 A
T J max 150 0C
G u, C
n-channel TO-247AC
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench K3BTtechnologyto achieve low VCE(on) and low EPULSETM rating persilicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
l/as Gate-to-Emitter Voltage A30 V
lc @ To = 25°C Continuous Collector Current, I/ss @ 15V 70 A
k; @ To = 100°C Continuous Collector, Vas @ 15V 40
lm, @ TC = 25°C Repetitive Peak Current 0) 250
PD ©Tc = 25°C Power Dissipation 160 W
PD ©Ts = 100°C Power Dissipation 63
Linear Derating Factor 1.3 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
RBJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) © - 0.80
R, JC (Diode) Thermal Resistance Junction-to-Case-(each Diode) C) 1.6 2.4
Recs Case-to-Sink (flat, greased surface) 0.24 - "C/W
ROJA Junction-to-Ambient (typical socket mount) © - 40
Weight 6.0 (0.21) - g (oz)
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IRGP4085DPbF International
122R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 330 - - V VGE = 0V, ICE = 1 mA
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.34 - V/°C Reference to 25°C, Ice = 1mA
- 1.18 1.48 VGE=15V. Ice=25A®
- 1.36 1.68 VGE =15V, ICE = 40A ©
VCE(on) Static Collector-to-Emitter Voltage - 1.69 2.09 V l/as = 15V, ICE = 70A ©
- 2.26 2.76 l/ss =15v, ICE = 120A ©
- 1.93 - Vss = 15V, ICE = 70A, T, = 150°C
Vegan) Gate Threshold Voltage 2.6 - 5.0 V VCE = Vas, ICE = 500PA
AVGEmn/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
Ices Collector-to-Emmer Leakage Current - 2.0 25 PA VCE = 330V, VGE = 0V
_ 5.0 - VCE = 330v, Vas = OV, TJ = 100°C
- 100 - vCE = 330v, l/ss = OV, TJ = 150°C
IGES Gate-to-Emitter Forward Leakage - - 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage ___ __- -100 VGE = -30V
gfe Forward Transconductance - 50 - S Vce = 25V, ICE = 25A
q, Total Gate Charge - 85 - nC VCE = 200V, Ic = 25A, l/ss = 15V©
gm Gate-to-Collector Charge --- 31 _-_
tdmm Turn-On delay time - 47 - IC = 25A, Vcc = 196V
t, Rise time - 37 - ns Rs = Ion, L=200pH, LS: 200nH
tam) Turn-Off delay time - 176 - T, = 25°C
t, Fall time - 99 -
tum) Turn-On delay time - 45 - Ic = 25A, Vcc = 196V
t, Rise time - 38 - ns Rs = Ion, L=200uH, LS: 200nH
1m) Turn-Off delay time - 228 - T J = 150°C
t, Fall time - 183 -
tst Shoot Through Blocking Time 100 - - ns Vcc = 240V, VGE = 15V, Rs-- 5.19
- 834 - L = 220nH, C= 0.40pF, Vas = 15V
EPULSE Energy per Pulse pJ Vcc = 240V, Rs-- 5.19, TJ = 25°C
L = 220nH, C= 0.40pF, VGE = 15V
- 985 - Vcc = 240v, Re: 5.1Q, TJ = 100°C
Ciss Input Capacitance - 2297 - l/ss = 0V
Coss Output Capacitance - 141 - pF VCE = 30V
C,, Reverse Transfer Capacitance - 74 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 5.0 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 13 - from package
and center of die contact
Diode Characteristics © T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
IHAV) Average Forward Current at - _ 8 O A
TC=155°C .
IFSM Non Repetitive Peak Surge Current - - 100 A Tr, = 155°C, PW = 6.0ms half sine wave
VF Forward Voltage --- 1.19 1.3 V V = 8A
- 0.94 1.0 IF = 8A, T, =150°C
tr, Reverse Recovery Time - 35 60 ns IF = IA, di/dt = -50A/ps, VR =30V
_ 43 - T J = 25°C
- 67 - TJ = 125°C IF = 8A
0,, Reverse Recovery Charge - 60 - nC T J = 25°C di/dt = 200A/ps
-- 210 - T, = 125°C l/n = 200V
Ir, Peak Recovery Current - 2.8 - A T J = 25°C
- 6.3 - T J = 125°C
Notes:
co Half sine wave with duty cycle = 0.1, ton=2psec. © Pulse width 5 400ps; duty cycle 5 2%.
© Re is measured at TJ of approximately 90°C.
2
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