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IRGI4090PBF
300V Plasma Display Panel Trench IGBT in a TO-220 FullPak Package
PD-97318A
lRGl4090PbF
International
TOR Rectifier PDP TRENCH IGBT
Features Key Parameters
. Advanced Trench IGBT Technology VCE min 300 v
. Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 11A 1.20 V
circuits in PDP applications IRP max @ Tc-- 25°C 140 A
. Low VCE(on) and Energy per Pulse (EPULSETM) T max 150 °C
for improved panel efficiency J
. High repetitive peak current capability
q Lead Free package C
Description
'cii:t,
E TO-220AB
n-channel Full-Pak
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
VGE Gate-to-Emitter Voltage :30 V
IC @ To = 25°C Continuous Collector Current, VGE @ 15V 21 A
lc @ Tc = 100°C Continuous Collector, VGE @ 15V 11
lm, @ TC = 25°C Repetitive Peak Current OD 140
Po @Tc = 25°C Power Dissipation 34 W
Po @T0 = 100°C Power Dissipation 14
Linear Derating Factor 0.27 W/°C
TJ Operating Junction and -40 to + 150 ''C
Tsms Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 3.65 °CNV
1
06/13/08
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IRGl4090PbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
International
IEER Rectifier
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 300 - - V VGE = 0V, ICE = 500pA
V(BR)ECS Emitter-to-Collector Breakdown Voltage© 30 - - V VGE = OV, ICE = 1.0A
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.30 - V/°C Reference to 25''C, ICE = 5.0PA
- 1.20 - 1/as=15V,lcE=11A@
- 1.67 1.94 Vas = 15V, ICE = 30A ©
VCE(on) Static Collector-to-Emitter Voltage - (23:: : V X: . 12:: l: . :8: g
_ 4.50 - VGE =15V, ICE = 120A ©
- 4.75 - vGE = 15V, ICE = 90A, TJ = 150°C ©
VGE(th) Gate Threshold Voltage 2.6 - 5.0 V l/cs = Vas, ICE = 250pA
AVGE(th)/ATJ Gate Threshold Voltage Coefficient - -12 - mV/°C Reference to 25°C
Ices Collector-to-Emitter Leakage Current - 2.0 5.0 pA VCE = 300V, VGE = 0V
- 5.0 - vCE = 300V, vGE = OV, T., = 100°C
- 100 - VCE = 300V, N/se = 0V, Tu = 150°C
IGES Gate-to-Emitter Forward Leakage - - 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage - - -1OO VGE = -30V
gfe Forward Transconductance - 11 - S Vce = 25V, ICE = 11A
q, Total Gate Charge - 34 - nC l/cs = 200V, IC = 11A, Vas = 15V©
Qgc Gate-to-Collector Charge - 9.6 -
tam) Turn-On delay time - 20 - lc = 11A, Vcc = 240V
t, Rise time - 14 - ns Rs = 109, L=200pH, Ls-- 150nH
tum) Turn-Off delay time - 99 - T J = 25°C
t, Fall time - 68 -
td(on) Turn-On delay time - 19 - IC = 11A, Vcc = 240V
t, Rise time - 15 - ns RG = Ion, L=200pH, LS: 150nH
tum, Turn-Off delay time - 139 - T, = 150°C
t, Fall time - 129 -
tst Shoot Through Blocking Time 100 - - ns Vcc = 240V, VGE = 15V, Re: 5-19
L =220nH, C= 0.10pF, vGE =15V
EPULSE Energy per Pulse - 549 - pd Vcc = 240v, Re: 5.100, TJ = 25°C
L =220nH, C= 0.10pF, vGE =15V
- 637 - Vcc = 240v, Rs-- 5.100, TJ = 100°C
Cies Input Capacitance - 1153 - Vas = 0V
Coes Output Capacitance - 59 - pF VCE = 30V
Cres Reverse Transfer Capacitance - 27 - f = 1.0MHZ, See Fig.13
LC Internal Collector Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 7.5 - from package
and center of die contact
Notes:
OD Half sine wave with duty cycle = 0.05, PW=2psec.
© Ro is measured at To of approximately 90°C.
© Pulse width f 400ps; duty cycle 3 2%.
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