IRGI4085PBF ,330V Plasma Display Panel Trench IGBT in a TO-220 FullPak Packageapplications.Absolute Maximum RatingsParameter Max. UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25 ..
IRGI4090PBF ,300V Plasma Display Panel Trench IGBT in a TO-220 FullPak Packageapplications.Absolute Maximum RatingsParameter Max. UnitsVGate-to-Emitter Voltage ±30 VGEI @ T = 25 ..
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IRGI4085PBF
330V Plasma Display Panel Trench IGBT in a TO-220 FullPak Package
International
TOR Rectif
Features
. Advanced Trench IGBT Technology
. Optimized for Sustain and Energy Recovery
circuits in PDP applications
. Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
. High repetitive pe
. Lead Free package
Description
PDP TRENCH IGBT
PD - 97285
IRGl4085PbF
Key Parameters
VCE min 330 V
VCE(ON) typ. @ IC = 28A 1.21 V
Irv, max @ TC: 25°C 210 A
Tu max 150 "C
ak current capability
E TO-220AB
n-channel Full-Pak
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench K3BTtechnologyto achieve low VCE(on) and low EPULSETM rating persilicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
I/rss Gate-to-Emitter Voltage t30 V
lc @ TC = 25°C Continuous Collector Current, Vee @ 15V 28 A
IC © Tc = 100°C Continuous Collector, VGE @ 15V 15
lm, © TC = 25°C Repetitive Peak Current OD 210
Pu @Tc = 25°C Power Dissipation 38 W
PD @Tc = 100°C Power Dissipation 15
Linear Derating Factor 0.30 W/°C
Tu Operating Junction and -40 to + 150 °C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case C) - 3.29 ''C/W
1
05/30/07
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IRGl4085PbF
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
International
122R Rectifier
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-emitter Breakdown Voltage 330 - - V Vee = ov, ICE = 1 mA
V(BR)ECS Emitter-to-Collector Breakdown Voltages 30 - - V Vas = 0V, Ics = 1 A
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.31 - V/°C Reference to 25''C, ICE = 1mA
- 1.05 - kw-- 15V, Ics-- 15A ©
- 1.21 1.50 I/ss = 15V, ICE = 28A ©
VcE(on) Static Collector-to-Emitter Voltage - "di', _- V V: . EV :Z: . It g
- 2.23 - VGE = 15V, ICE = 120A ©
- 1.90 - Vas = 15V, ICE = 70A, To = 150°C ©
VGEW Gate Threshold Voltage 2.6 - 5.0 v Vce = l/ss, ICE = 500uA
AVGEOm/ATJ Gate Threshold Voltage Coefficient - -10 - mV/°C
Ices Collector-to-Emitter Leakage Current - 2.0 25 pA Vce = 330V, VGE = 0V
- 5.0 - VCE = 330V, VGE = 0V, TJ = 100°C
- 100 - l/cs = 330V, Vas = 0V, To = 150°C
legs Gate-to-Emitter Forward Leakage - - 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage - - -100 Vas = -30V
Che Forward Transconductance - 51 - S Vce = 25V, ICE = 25A
09 Total Gate Charge - 84 - nC l/cs = 200V, lc = 25A, Vas = 15V©
Qgo Gate-to-Collector Charge - 30 -
tom Turn-On delay time - 48 - lc = 25A, Vcc = 196V
t, Rise time - 37 - ns Rs = 109, L=200pH, LS: 150nH
ton Turn-Off delay time - 180 - Tu = 25°C
t, Fall time - 102 -
tum, Turn-On delay time - 45 - Ic = 25A, Vcc = 196V
t, Rise time - 38 - ns RG = 109, L=200pH, LS: 150nH
tum) Turn-Off delay time - 234 - T J = 150°C
t, Fall time - 185 -
ts, Shoot Through Blocking Time 100 - - ns Vcc = 240V, Vas = 15V, Re: 5.19
L = 220nH, C= 0.40pF, VGE = 15V
EPULSE Energy per Pulse - 854 - pJ Vcc = 240V, Re: 5.19, TJ = 25°C
L = 220nH, c: 0.40pF, I/se = 15V
- 977 - Vcc = 240v, Re: 5.10, T, = 100°C
Cies Input Capacitance - 2287 - VGE = 0V
CDes Output Capacitance - 141 - pF VCE = 30V
Ores Reverse Transfer Capacitance - 73 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 5.0 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 13 - from package
and center of die contact
Notes:
OD Half sine wave with duty cycle = 0.10, ton=2psec.
(D Re is measured at To of approximately 90''C.
© Pulse width f 400ps; duty cycle S 2%.
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