IRGI4065PBF ,300V Plasma Display Panel IGBT in a TO-220 FullPak Packageapplications.Absolute Maximum RatingsParameter Max. UnitsV ±30Gate-to-Emitter Voltage VGEI @ T = 25 ..
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IRGI4065PBF
300V Plasma Display Panel IGBT in a TO-220 FullPak Package
International
TOR Rectif
Features
. Advanced Trench
. Optimized for Sustain and Energy Recovery
circuits in PDP applications
. Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
PDP TRENCH IGBT
PD-97187
IRGl4065PbF
IGBT Technology
Key Parameters
VCE min 300 V
VCE(ON) typ. @ IC = 28A 1.25 V
lm, max @ TC: 25°C 170 A
T J max 150 °C
. High repetitive peak current capability
. Lead Free package
Description
(si'))::,,
E TO-220AB
n-channel Full-Pak
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench K3BTtechnologyto achieve low VCE(on) and low EPULSETM rating persilicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Emitter Voltage :30 V
IC @ To = 25°C Continuous Collector Current, Vas @ 15V 28 A
k; © Tc = 100°C Continuous Collector, Vss @ 15V 14
IRP @ To = 25°C Repetitive Peak Current C) 170
PD @Tc = 25°C Power Dissipation 39 W
PD @Tc = 100°C Power Dissipation 16
Linear Derating Factor 0.31 W/°C
Tu Operating Junction and -40 to + 150 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb'in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case © - 3.20 °CNV
1
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02/17/06
IRGl4065PbF
Electrical Characteristics © To = 25°C (unless otherwise specified)
International
122R Rectifier
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 300 - - V VGE = OV, ICE = 1 mA
V(BR)ECS Emitter-to-Collector Breakdown Voltage© 18 - - V Vas = 0V, ICE = 1 A
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.23 - V/°C Reference to 25°C, ICE = 1mA
- 1.05 - V VGE=15V, |CE=15A®
- 1.25 1.45 v Vas = 15V, ICE = 28A ©
Vegan) Static Collector-to-Emitter Voltage - 1.75 - V VGE = 15V, ks = 70A ©
- 2.25 - VGE=15V, |CE=11OA ©
- 2.75 - V VGE = 15V, ICE = 110A, Tu = 150°C ©
VGE(th) Gate Threshold Voltage 2.6 - 5.0 V I/cs = VGE, ICE = 0.5mA
AVGE(m)/ATJ Gate Threshold Voltage Coefficient - -12 - mV/°C
ICES Collector-to-Emitter Leakage Current - 2.0 25 PA Vce = 300V, VGE = 0V
- 50 - Vcs = 300V, Vas = 0V, T, = 150°C
IGES Gate-to-Emitter Forward Leakage - - 100 nA VGE = 30V
Gate-to-Emitter Reverse Leakage - - -100 Vas = -30V
gfe Forward Transconductance - 26 - S Vca = 25V, ICE = 25A
09 Total Gate Charge - 62 - nC Vcs = 200V, lc = 25A, Vas = 15V©
Qgc Gate-to-Collector Charge - 20 -
tst Shoot Through Blocking Time 100 - - ns I/cc = 240V, VGE = 15V, Re: 5.1 Q
L = 220nH, C= 0.40pF, l/se =15V
EPULSE Energy per Pulse - 875 - pJ Vcc = 240V, Re: 5.19, Tu = 25°C
L = 220nH, C= 0.40pF, Vas =15V
- 975 - Vcc = 240V, Rs-- 5.19, Tu = 100°C
Ciss Input Capacitance - 2200 - I/ae = 0V
Coss Output Capacitance - 110 - pF Vce = 30V
Crss Reverse Transfer Capacitance - 55 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 5.0 - Between lead,
nH 6mm (0.25in.)
Ls Internal Emitter Inductance - 13 - from package
and center of die contact
Notes:
co Half sine wave with duty cycle = 0.10, ton=2psec.
CD Re is measured at TJ of approximately 90°C.
© Pulse width 3 400ps; duty cycle f 2%.
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