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IRGBC40S
600V Discrete IGBT in a TO-220AB package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for line frequency operation (to400 Hz)
SteFg1krCtrrertss.Ft-ar1es
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
PD - 9.690A
IRGBC40S
Standard Speed IGBT
n-channel
VCES = 600V
VCE(sat) S 1.8V
@VGE =15V,lc = 31A
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ To = 25°C Continuous Collector Current 50
lo @ Tc = 100°C Continuous Collector Current 31 A
ICM Pulsed Collector Current (D 240
ILM Clamped Inductive Load Current © 100
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 15 mJ
PD @ Tc = 25°C Maximum Power Dissipation 160 W
Pro @ Tc = 100°C Maximum Power Dissipation 65
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - - 0.77
Recs Case-to-Sink, flat, greased surface - 0.50 - "CA/V
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2.0 (0.07) - g (oz)
Revision 0
IRGBC40S TOR
Electrical Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V I/ss = 0V, Ic = 250pA
V(BR)ECS Emjtter-ttycollettor Breakdown Voltage © 20 - - V VGE = 0V, IC = 1.0A
AV(BR)CEs/ATJ Temp. Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.6 1.8 lc = 31A VGE = 15V
- 2.2 - V Ic = 60A See Fig. 2, 5
- 1.7 - lc=31A,Tu= 150°C
VGath) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temp. Coeff. of Threshold Voltage - -9.3 - mV/°C VCE = VGE. k: = 250pA
gfe Forward Transconductance © 12 21 - S VCE = 100V, Ic = 31A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = t20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 62 90 lc = 31A
Qge Gate - Emitter Charge (turn-on) - 10 15 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 27 40 VGE = 15V
tam) Tum-On Delay Time - 28 - TJ = 25°C
tr Rise Time - 50 - ns k: = 31A, Vcc = 480V
tu(ott) Tum-Off Delay Time - 1100 1500 VGE = 15V, Rs = lon
tf Fall Time - 620 1100 Energy losses include "tail"
Eon Turn-On Switching Loss - 1.0 -
Eoff Turn-Off Switching Loss - 12 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 13 20
tam) Tum-On Delay Time - 29 - TJ = 150°C,
tr Rise Time - 53 - ns lc = 31A, Vcc = 480V
tam) Tum-Off Delay Time - 1600 - VGE = 15V, RG = lon
tf Fall Time - 1200 - Energy losses include "tail"
Ets Total Switching Loss - 22 - mJ See Fig. 10, 14
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 1600 - VGE = 0V
Cues Output Capacitance - 140 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 20 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© I/cc-Moo/ll/css), Vss=20V, L=10pH,
RG=1OQ, (See fig. 13a)
(3 Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps,
single shot.
