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IRGBC30S
600V Discrete IGBT in a TO-220AB package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for line frequency operation ( to 400 Hz)
See Fig. 1 for Current vs. Frequency Curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
PD - 9.688A
IRGBC30S
Standard Speed IGBT
n-channel
VCES = 600V
VCE(sat) C 2.2V
@VGE =15V,IC = 18A
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCEs Collector-to-emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 34
Ic @ Tc = 100°C Continuous Collector Current 18 A
ICM Pulsed Collector Current C) 68
ILM Clamped Inductive Load Current © 68
VGE Gate-to-emitter Voltage :20 V
EARv Reverse Voltage Avalanche Energy © 10 ml
Pro @ Tc = 25°C Maximum Power Dissipation 100 W
Po @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, tor 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rac Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.50 - ''C/W
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2.0 (0.07) - g (oz)
Revision 0
IRGBC30S TOR
Electrical Characteristics @ I, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V I/ss = 0V, Ic = 250PA
V(BR)ECS Em'tter-ttycolleter Breakdown Voltage © 20 - - V VGE = 0V, IC = 1.0A
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.75 - V/°C VGE = 0V, lc = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 1.7 2.2 lc = 18A VGE = 15V
- 2.4 - V Ic = 34A See Fig. 2, 5
- 1.9 - Ic =18A,TJ =150°C
VGath) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250pA
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE. k: = 250PA
gfe Forward Transconductance © 6.0 11 - S VCE = 100V, lc = 18A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, Tu = 150°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = t20V
Switching Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 28 40 lc = 18A
Qge Gate - Emitter Charge (turn-on) - 5.0 8.0 nC Vcc = 400V See Fig. 8
090 Gate - Collector Charge (turn-on) - 12 20 VGE = 15V
tam) Tum-On Delay Time - 26 - TJ = 25°C
tr Rise Time - 32 - ns k: = 18A, Vcc = 480V
tu(ott) Tum-Off Delay Time - 820 1100 VGE = 15V, Rs = 23n
tf Fall Time - 720 1200 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.51 -
Eoff Turn-Off Switching Loss - 6.6 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 7.1 10
tam) Tum-On Delay Time - 26 - TJ = 150°C,
tr Rise Time - 35 - ns lc = 18A, Vcc = 480V
tam) Tum-Off Delay Time - 1200 - VGE = 15V, RG = 23n
tf Fall Time - 1500 - Energy losses include "tail"
Ets Total Switching Loss - 12 - mJ See Fig. 10, 14
Ls Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 700 - VGE = 0V
Cues Output Capacitance - 70 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 9.2 - f = 1.0MHz
Notes:
OD Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
© I/cc-Moo/ll/css), Vss=20V, L=10pH,
Rc-- 239, (See fig. 13a)
(3 Repetitive rating; pulse width limited
by maximum junction temperature.
© Pulse width S 80ps; duty factor 5 0.1%.
S Pulse width 5.0ps,
single shot.
