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IRGBC30KD2
600V Copack IGBT in a TO-220AB package
lhteripatipoal PD-9.1107
IOR Rectifier IRGBC30KD2
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated
WITH ULTRAFAST SOFT RECOVERY DIODE UItraFast CoPack IGBT
Features C
. Short circuit rated -10ps @125°C, VGE = 15V VCES = 600V
. Switching-Ioss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes VCE t < 3 8V
. Optimized for high operating frequency (over 5kHz) G (sa ) _ .
See Fig. 1 for Current vs. Frequency curve
@VGE =15V, Ic = 14A
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifer's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of aiii-
high-voltage, high-current, applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 23
Ic @ Tc = 100°C Continuous Collector Current 14
ICM Pulsed Collector Current OD 46 A
ILM Clamped Inductive Load Current © 46
IF @ To = 100°C Diode Continuous Forward Current 12
IFM Diode Maximum Forward Current 46
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emilie, Voltage i 20 V
Pro @ Tc = 25°C Maximum Power Dissipation 100 W
Pro @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 1O Ibf-in (1.1 tom)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT ------------ 1.2
ReJC Junction-to-Case - Diode ------------ 2.5 "CIW
Recs Case-to-Sink, flat, greased surface - 0.50 -
' Junction-to-Ambient, typical socket mount _-__--- 80
Wt Weight ------ 2 (0.07) - g (oz)
IRGBC30KD2 TOR
Electrical Characteristics © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage@ 600 - - V VGE = 0V, k: = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage---- 0.30 ---- V/''C VGE = 0V, 1c = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ---- 2.5 3.8 IO = 14A VGE = 15V
- 3.3 - V k: = 23A See Fig. 2, 5
- 2.5 - Ic = 14A, T: = 150°C
VGE(lh) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, Ic = 250PA
AN/auth/ATO Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, lc = 250PA
gfe FonNard Transconductance © 3.3 6.5 ---- S VCE-- 100V, lc = 14A
ICES Zero Gate Voltage Collector Current ---- - 250 pA VGE = 0V, VCE = 600V
---- - 2500 VGE = 0V, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop ---- 1.4 1.7 V k: = 12A See Fig. 13
- 1.3 1.6 Ic =12A,TJ = 150°C
Kass Gate-to-Emitter Leakage Current - - i100 nA VGE = i20V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) ---- 39 58 lc = 14A
Qqe Gate - Emitter Charge (turn-on) ---- 8.7 13 nC Vcc = 400V
Qqc Gate - Collector Charge (turn-on) -- 15 23 See Fig. 8
1mm Turn-On Delay Time ---- 67 ---- TJ = 25°C
tr Rise Time ---- 120 - ns Ic = 14A, Vcc = 480V
tdwm Turn-Off Delay Time ---- 110 170 VGE = 15V, Rs = 23n
tf FallTime ---- 94 140 Energy losses include "tail" and
Ed, Turn-On Switching Loss ---- 1.1 - diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.5 - mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ---- 1.6 2.4
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, TJ = 125°C
VGE = 15V, Rs = 239, VcPK < 500V
tam) Turn-On Delay Time ---- 64 ---- To = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time - 100 ---- ns Ic = 14A, Vcc = 480V
td(otr) Turn-Off Delay Time - 190 - VGE = 15V, Rs = 239
t, FallTime - 180 - Energy losses include "tail" and
Ets Total Switching Loss - 2.2 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance ---- 740 ---- VGE = 0V
Goes Output Capacitance - 92 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 9.4 - f = 1.0MHz
trr Diode Reverse Recovery Time - 42 60 ns TJ = 25°C See Fig.
---- 80 120 TJ = 125°C 14 IF = 12A
In Diode Peak Reverse Recovery Current - 3.5 6.0 A To = 25°C See Fig.
- 5.6 10 To = 125°C 15 VR = 200V
G, Diode Reverse Recovery Charge ---- 80 180 nC To = 25°C See Fig.
- 220 600 TJ = 125°C 16 di/dt = 200A/
us d (rec)M/ itDiode Pea Rate t f Fall of Recovery - 180
- Alps To = 25°C See Fi . During tr, - 120
Notes: Tu --W%c--8dgNcEs), VGE=20V, L=10pH, © Pulse width 5.0ps,
co Repetitive rating; VGE=20V, pulse width limited Rs-- 230, (See fig. 19 ) single shot.
by max. junction temperature. ( See ftg. 20 )
© Pulse width S 80ps; duty factor f 0.1%.
