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IRGBC20KD2-S
600V Copack IGBT in a D2-Pak package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
PD - 9.1125
IRGBC20KD2-S
Short Circuit Rated
UItraFast CoPack IGBT
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
. Short circuit rated -10ps @125°C, VGE= 15V
. Switching-loss rating includes all "tail" losses
. HEXFREDTM soft ultrafast diodes
. Optimized for hig
h operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benehts to a host of
high-voltage, high-current,
These new short circuit rated devices are especially suited for motor control
applications.
n-channel
VCE(sat) f 3.5V
@VGE = 15V, IC = 6.0A
VCES = 600V
and other applications requiring short circuit withstand capability.
SMD-220
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ Tc = 25°C Continuous Collector Current 10
IC @ Tc = 100°C Continuous Collector Current 6.0
ICM Pulsed Collector Current T 20 A
ILM Clamped Inductive Load Current © 20
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 20
tsc Short Circuit Withstand Time 10 ps
VGE Gate-to-Emitter Voltage i 20 V
Po @ Tc = 25°C Maximum Power Dissipation 60 W
Po @ Tc = 100°C Maximum Power Dissipation 24
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 Ibf-in (1.1 tom)
Thermal Resistance
Parameter Min Typ. Max. Units
ReJC Junction-to-Case - IGBT -_-____ 2.1
ReJC Junction-to-Case - Diode ------------ 3.5 °CNV
ReJA Junction-to-Ambient, (PCB Mount)" ----------- 40
RSJA Junction-to-Ambient, typical socket mount -__ 80
Wt Weight - 2 (0.07) - g (oz)
" When mounted on 1" square PCB (FR-4 or G-10 Material)
For recommended footprint and soldering techniques refer to application note #AN-994.
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IRGBC20KD2-S TOR
Electrical Characteristics © T., = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage0 600 - - V VGE = 0V, IC = 250pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Volta Je---- 0.37 - V/°C VGE = 0V, k: = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.4 3.5 Ic = 6.0A VGE = 15V
- 3.6 - V k: = 10A See Fig. 2, 5
- 2.8 - lc = 6.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = I/se, Ic = 250pA
AVGEahVATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, lc = 250pA
gfe Forward Transconductance CI) 1.9 3.3 - S VCE-- 100V, Ic = 6.0A
ICES Zero Gate Voltage Collector Current - - 250 PA VGE = 0V, VCE = 600V
- - 1700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ---- 1.4 1.7 V lc = 8.0A See Fig. 13
- 1.3 1.6 k: = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = 120V
Switching Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 17 26 lc = 6.0A
Qqe Gate - Emitter Charge (turn-on) - 4.3 6.8 nC Vcc = 400V
Qqc Gate - Collector Charge (turn-on) - 6.4 11 See Fig. 8
tdwn) Turn-On Delay Time - 59 - T: = 25°C
t, RiseTime - 38 - ns k: = 6.0A, Vcc = 480V
tdmm Turn-Off Delay Time - 110 210 VGE = 15V, Rs = 509
tf FaIITime - 80 120 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.28 - diode reverse recovery.
Eoff Turn-Off Switching Loss ---- 0.15 - m] See Fig. 9, 10, ll, 18
Ets Total Switching Loss ---- 0.43 0.90
tsc Short Circuit Withstand Time 10 - - ps Vcc = 360V, T: = 125°C
VGE = 15V, Re = 509, VCPK < 500V
tam) Turn-On Delay Time - 52 - TJ = 150°C, See Fig. 9, 10, 11, 18
tr RiseTime - 35 - ns Ic = 6.0A, Vcc = 480V
td(off) Turn-Off Delay Time ---- 170 - VGE = 15V, Rs = 50n
tt FaIITime - 170 - Energy losses include "tail" and
Ets Total Switching Loss - 0.7 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 350 - VGE = 0V
CDes Output Capacitance - 45 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 4.7 - f=1.0MHz
tn Diode Reverse Recovery Time - 37 55 ns T: = 25°C See Fig.
- 55 90 T: = 125°C 14 IF = 8.0A
lrr Diode Peak Reverse Recovery Current - 3.5 5.0 A TJ = 25°C See Fig.
- 4.5 8.0 TJ =125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge - 65 138 nC TJ = 25°C See Fig.
- 124 360 TJ = 125°C 16 di/dt = 200N
us d (rec)M/q1tDiode Peal Rate fFaII of Recovery - 240
- Alps To = 25°C ee Fic. During tr, - 210
Notes: To = 1@5\¢CC=801%(VCES), VGE=20V, L=10pH, © Pulse width 5.0ps,
co Repetitive rating; VGE=20V, pulse width limited Rs-- 509, (See fig. 19) single shot.
by max. junction temperature. ( See rig. 20 )
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© Pulse width S 80ps; duty factor S 0.1%.
