IRGB6B60K ,600V UltraFast 10-30 kHz IGBT in a TO-220AB packageFeatures Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability.I = 7.0A, ..
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IRGBC30S ,600V Discrete IGBT in a TO-220AB packageapplications.TO-220ABAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGBC40S ,600V Discrete IGBT in a TO-220AB packageapplications.TO-220ABAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
IRGBF20F ,900V Discrete IGBT in a TO-220AB packageapplications.TO-220ABAbsolute Maximum Ratings Parameter Max. UnitsV Collector-to-Emitt ..
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IRGB6B60K-IRGS6B60K
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Low VCE (on) Non Punch Through IGBT Technology.
. 10ps Short Circuit Capability.
. Square RBSOA.
. Positive VCE (on) Temperature Coefficient.
Benefits
. Benchmark Efficiency tor Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Excellent Current Sharing in Parallel Operation.
PD - 94575
IRGB6B60K
IRGS6B60K
IRGSL6B60K
C VCES = 600V
lc = 7.0A, Tc=100oC
G tsc > 10ps, T J=150°C
n-channel
TO-220AB D2Pak TO-262
IRGB6B60K IRGS6B60K IRGSL6B60K
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 13 A
Ic @ Tc = 100°C Continuous Collector Current 7.0
ICM Pulsed Collector Current 26
ILM Clamped Inductive Load Current C) 26
VGE Gate-to-Emitter Voltage i 20 V
Po @ Tc = 25''C Maximum Power Dissipation 90 W
PD @ Tc = 100°C Maximum Power Dissipation 36
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - IGBT - - 1.4
Recs Case-to-Sink, flat, greased surface - 0.50 - °C/W
ReJA Junction-to-Ambient, typical socket mount© - - 62
RNA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
10/28/02
IRG/B/S/SL6B60K
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V N/ss = 0V, Ic = 500PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage 0.3 - V/°C VGE = 0V, Ic = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 V k: = 5.0A, VGE = 15V 5, 6,7
--- 2.20 2.50 IC = 5.0A,VGE = 15V, T: = 150°C 8,9,10
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VCE, lc = 250pA 8,9,10
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, Ic = 1.0mA, (25°C-150°C) 11
gfe Forward Transconductance - 3.0 - S VCE = 50V, lc = 5.0A, PW=80ps
ICES Zero Gate Voltage Collector Current - 1.0 150 pA VGE = 0V, VCE = 600V
- 200 500 VGE = 0V, VCE = 600V, To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = EOV
Switching Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
09 Total Gate Charge (turn-on) - 18.2 - lc = 5.0A 17
Qge Gate - Emitter Charge (turn-on) - 1.9 - nC Vcc = 400V CT1
Qgc Gate - Collector Charge (turn-on) - 9.2 - VGE = 15V
Eon Turn-On Switching Loss - 110 210 pJ k: = 5.OA, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 135 245 VGE = 15V,RG = 1009, L =1.4mH
Etot Total Switching Loss - 245 455 Ls = 150nH To = 25°C (9
tdwn) Turn-On Delay Time - 25 34 Ic = 5.0A, Vcc = 400V CT4
tr Rise Time - 17 26 Vas = 15V, Rs = 1009 L =1.4mH
td(ott) Turn-Off Delay Time - 215 230 ns Ls = 150nH, To = 25°C
tr Fall Time - 13.2 22
E0n Turn-On Switching Loss - 150 260 Ic = 5.0A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 190 300 pd VGE = 15V,RG = 1009, L =1.4mH 12,14
Em Total Switching Loss - 340 560 Ls = 150nH TJ = 150°C (D wnvwz
tdwn) Turn-On Delay Time - 28 37 lg = 5.0A, Vcc = 400V 13, 15
tr Rise Time - 17 26 Vas = 15V, Rs = 1009 L =1.4mH CT4
td(0ff) Turn-Off Delay Time - 240 255 ns Ls = 150nH, To = 150°C WF1
tf Fall Time - 18 27 WF2
Cies Input Capacitance - 290 - VGE = 0V
Goes Output Capacitance - 34 - pF Vcc = 30V 16
Ores Reverse Transfer Capacitance - 10 - f = 1.0MHz
. . To = 150''C, Ic = 26A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE Vcc = 500V, VGE =+15V to 0V,RG = 1009 CT2
. . . ps To = 150°C, Vp =600V, Rs = 1009 CT3
SCSOA Short Circuit Safe Operting Area 10 - - Vcc = 360V, VGE = +15V to 0V WF3
Note CD to (D are on page 13
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