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IRGB430U
500V Discrete IGBT in a TO-220AB package
International
Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
Features
. Switching-loss rating includes all "tail" losses
. Optimized for high operating frequency (over
5kHz) See Fig. 1 for Current vs. Frequency curve
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
PD - 9.783A
IRGB430U
UItraFast IGBT
n-channel
VCES = 500V
VCE(sat) S 3.0V
@VGE=15V,IC= 15A
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 500 V
lc @ To = 25°C Continuous Collector Current 25
lo @ Tc = 100°C Continuous Collector Current 15 A
ICM Pulsed Collector Current (D 50
ILM Clamped Inductive Load Current © 50
VGE Gate-to-Emitter Voltage 120 V
EARV Reverse Voltage Avalanche Energy © 10 mJ
PD @ Tc = 25°C Maximum Power Dissipation 100 W
Pro @ Tc = 100°C Maximum Power Dissipation 42
To Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
RSJC Junction-to-Case - - 1.2
Recs Case-to-Sink, flat, greased surface - 0.50 - "CA/V
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2.0 (0.07) - g (oz)
Revision 0
IRGB430U TOR
Electrical Characteristics @ ll = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 500 - - V VGE = 0V, IC = 250pA
V(BR)ECS Emitter-tocolledor Breakdown Voltage (9 20 - - V VGE = 0V, lc = 1.0A
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.46 - V/°C VGE = 0V, Ic = 1.0mA
Vcaon) Collector-to-emitter Saturation Voltage - 2.3 3.0 k; = 15A VGE = 15V
- 2.8 - V lc = 25A See Fig. 2, 5
- 2.6 - Ic =15A,T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 5.5 VCE = VGE, lc = 250PA
AN/GEO/ATO Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = VGE, Ic = 250pA
gfe Forward Transconductance © 2.3 8.1 - S VCE = 100V, lc = 15A
logs Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 500V
- - 1000 VGE = 0V, VCE = 500V, Tu = 150°C
IGES Gate-to-Emitler Leakage Current - - i100 nA VGE = iZOV
Switching Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (tum-on) - 31 47 lc = 15A
Qge Gate - Emitter Charge (turn-on) - 6.2 9.3 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (tum-on) - 12 19 VGE = 15V
tam) Tum-On Delay Time - 29 - To = 25°C
tr Rise Time - 11 - ns Ic = 15A, Vcc = 400V
td(off) Tum-Off Delay Time - 91 160 VGE = 15V, Rs = 23n
tf Fall Time - 66 120 Energy losses include "tail"
Eon Turn-On Switching Loss - 0.24 -
Eoff Turn-Off Switching Loss - 0.17 - mJ See Fig. 9, 10, 11, 14
Ets Total Switching Loss - 0.41 0.61
tum”) Turn-On Delay Time - 13 - To = 150°C,
tr Rise Time - 27 - ns IC = 15A, Vcc = 400V
tum“) Tum-Off Delay Time - 130 - l/SE = 15V, Rs = 23n
tf Fall Time - 130 - Energy losses include "tail"
Ets Total Switching Loss - 0.76 - mJ See Fig. 10, 14
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 660 - VGE = 0V
Coes Output Capacitance - 110 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 12 - f = 1.0MHz
Notes:
co Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
(See fig. 13b)
© Vcc=80%(VcEs), VGE=20V, L=10pH,
Re: 239, (See fig. 13a)
© Repetitive rating; pulse width limited
by maximum junction temperature.
6) Pulse width 5.0ps,
single shot.
© Pulse width s 80ps; duty factor s: 0.1%.
