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IRGB4086PBF
300V Plasma Display Panel (PDP) IGBT Switch in a TO-220AB package
International
ISBR Rectifier
Features
. Advanced Trench
q Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
. Low VCEM) and Energy per Pulse (EPULSET'V')
for Improved Panel Efficiency
. High Repetitive Peak Current Capability
. Lead Free Package
Description
PDP TRENCH IGBT
llRGl34086
IRGS4086
PD - 96222
Key Parameters
IGBT Technology VCE min 300 V
VCE(ON) typ. @ IC = 70A 1.90 V
lm, max © TC: 25°C C) 250 A
T J max 150 ''C
it,'iijii)t,, v16iii)
N . . ‘C E I, l, E
E TO-220AB D2Pak
n-channel IRGB4086PbF IRGS4086PbF
Gate Collector Emitter
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnologyto achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
VGE Gate-to-Emitter Voltage :30 V
k, © To = 25°C Continuous Collector Current, Vas @ 15V 70 A
IC @ To = 100°C Continuous Collector, VGE @ 15V 40
lm, @ To = 25°C Repetitive Peak Current (D 250
PD @TC = 25°C Power Dissipation 160 W
PD @Tc = 100°C Power Dissipation 63
Linear Derating Factor 1.3 W/°C
T, Operating Junction and -40 to + 150 °C
Tsms Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1.1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Rm (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) © - 0.8
Rocs Case-to-Sink (flat, greased surface) 0.24 - ''C/W
ROJA Junction-to-Ambient (typical socket mount) (2)(ii) - 40
Weight 6.0 (0.21) - g (oz)
1
02/02/09
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IRGB/S4086PbF
International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Volta. 300 - - V I/ss = OV, ICE = 1 mA
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.29 - V/°C Reference to 25°C, ICE = 1mA
- 1.29 1.55 I/ss = 15V, ICE = 25A (3)
- 1.49 1.67 I/ss = 15V, ICE = 40A (3
VCEwn) Static Collector-to-Eminer Voltage - 1.90 2.10 V I/ss = 15V, ICE = 70A (3)
- 2.57 2.96 I/ss = 15V, ICE = 120A (3
- 2.27 - I/ss = 15V, ICE = 70A, TJ = 150°C
VGth) Gate Threshold Voltage 2.6 - 5.0 V I/cs = Vas, ICE = 500pA
AVGEah/ATJ Gate Threshold Voltage Coefficient - -11 - mV/°C
ICES Collector-to-Emitter Leakage Current - 2.0 25 pA I/cs = 300V, VGE = 0V
- 5.0 - VCE = 300V, Vas = 0V, Tu = 100°C
- 100 - I/cs = 300V, VGE = 0V, T, = 150°C
lass Gate-to-Emitter Forward Leakage - - 100 nA Vas = 30V
Gate-to-Emitter Reverse Leakage - - -100 I/ss = -30V
gfe Forward Transconductance - 29 - S Vcs = 25V, ICE = 25A
q, Total Gate Charge - 65 - nC I/cs = 200V, IC = 25A, Vas = 15VC3)
ay, Gate-to-Collector Charge - 22 -
tam) Turn-On delay time - 36 - lc = 25A, Vcc = 196V
t, Rise time - 31 - ns Rs = 1052, L=200pH, LS: 200nH
tom Turn-Off delay time - 112 - TJ = 25°C
tr Fall time - 65 -
td(on) Turn-On delay time - 30 - lc = 25A, Vcc = 196V
t, Rise time - 33 - ns Rs = 1092, L=200pH, LS: 200nH
tom Turn-Off delay time - 145 - Tu = 150°C
tf Fall time - 98 -
tst Shoot Through Blocking Time 100 - - ns Vcc = 240V, VGE = 15V, Rs-- 5.19
L = 220nH, C= 0.40pF, Vas =15V
EPULSE Energy per Pulse - 1075 - pJ Vcc = 240V, Rs-- 5.19, TJ = 25°C
L = 220nH, C= 0.40pF, Var =15V
- 1432 - Vcc = 240V, Rs-- 5.1g, TJ = 100°C
Ciss Input Capacitance - 2250 - I/as = 0V
cu, Output Capacitance - 110 - pF Vcs = 30V
Crss Reverse Transfer Capacitance - 58 - f = 1.0MHz, See Fig.13
LC Internal Collector Inductance - 5.0 - Between lead,
nH 6mm (0.25in.)
Ls Internal Emitter Inductance - 13 - from package
and center of die contact
Notes:
co Half sine wave with duty cycle = 0.1, ton=2psec.
© Ro is measured at TJ of approximately 90°C.
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© Pulse width I 400ps; duty cycle s: 2%.
(9 When mounted on 1" square PCB (FR-4 or G-10 Material).
For recomended footprint and soldering techniques refer
to application note #AN-994.
