IRGB20B60PD1 ,600V Warp2 150kHz Copack IGBT in a TO-247AC packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units ..
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IRGB20B60PD1
600V Warp2 150kHz Copack IGBT in a TO-247AC package
International
Tait Rectifier
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
Applications
. Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies G
Features
Benefits
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
SMPS IGBT
PD - 94613A
IRGl320B60PD1
n-channel
Vcss = 600V
VCE(On) typ. = 2.05V
@ VGE=15V IC =13.0A
Equivalent MOSFET
Parameters OD
RCE(on) typ. = 158mQ
ID (FET equivalent) = 20A
. Parallel Operation for Higher Current Applications
. Lower Conduction Losses and Switching Losses
. Higher Switching Frequency up to 150kHz TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
Vcss Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 40
lc © Tc = 100°C Continuous Collector Current 22
ICM Pulse Collector Current (Ref. Fig. C.T.4) 80
lo, Clamped Inductive Load Current © 80 A
IF @ Tc = 25°C Diode Continous Forward Current 10
IF @ Tc = 100°C Diode Continous Forward Current 4
IFRM Maximum Repetitive Forward Current © 16
Vas Gate-to-Emir Voltage t20 V
Pr, © Tc = 25°C Maximum Power Dissipation 215 W
Po @ To = 100°C Maximum Power Dissipation 86
T, Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
IO Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min Typ. Max. Units
Rm (IGBT) Thermal Resistance Junction-to-Case-Ok IGBT) - - 0.58 "CAV
ROJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) -- -- 5.0
Recs Thermal Resistance, Case-to-Sink (flat, greased surface) - 0.50 -
ROJA Thermal Resistance, Junction-to-Ambient (typical socket mount) - - 80
Weight - 2 (0.07) - g (oz)
1
12/10/03
IRGB20B60PD1
International
Electrical Characteristics © T, = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V l/ss = 0V, Ic = 500PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.32 - V/°C l/ss = 0V, Ic = 1mA (25°C-125°C)
Rs Internal Gate Resistance - 4.3 - Q 1MHz, Open Collector
- 2.05 2.35 Ic = 13A, Vas = 15V 4, 5,6,8,9
Vegan) Collector-to-Emitter Saturation Voltage - 2.50 2.80 V Ic = 20A, Vas = 15V
- 2.65 3.00 to: 13A, VGE= 15v,TJ =125°c
- 3.30 3.70 IC = 20A, VGE = 15V, To = 125°C
VGEUh) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250pA 7,8,9
AVGE(,,,,/ATJ Threshold Voltage temp. coefficient - -11 - mV/°C I/cs = VGE, Ic = 1.0mA
gfe Forward Transconductance - 19 - S I/cs = 50V, IC = 40A, PW = 80ps
ICES Collector-to-Emitter Leakage Current - 1.0 250 PA Vas = 0V, VCE = 600V
- 0.1 - mA l/ss = 0V, VCE = 600V, T: =125°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V IF = 4.0A, VGE = 0V IO
- 1.4 1.7 IF = 4.0A, VGE = 0V, T, =125°C
less Gate-to-Emitter Leakage Current - - 1100 nA VGE = s2Ol, l/cs = 0V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions RetFig
ag Total Gate Charge (turn-on) - 68 102 k: = 13A 17
Qgc Gate-to-Collector Charge (turn-on) - 24 36 n0 Vcc = 400V CT1
Qge Gate-to-Emitter Charge (tu rn-on) - 10 15 l/ss = 15V
Eon Turn-On Switching Loss - 95 140 Ic = 13A, Vcc = 390V CT3
Eoff Turn-Off Switching Loss - 100 145 pd Vas = +15V, Ra = Ion, L = 200pH
Etoml Total Switching Loss - 195 285 T: = 25°C (0
tdion) Turn-On delay time - 20 26 k: = 13A, Vcc = 390V CT3
t, Rise time - 5.0 7.0 ns l/ss = +15V, Rs = Ion, L = 200pH
Mott) Turn-Off delay time - 115 135 T, = 25°C ©
t, Fall time - 6.0 8.0
Eon Turn-On Switching Loss - 165 215 IC = 13A, Vcc = 390V CT3
Eof, Turn-Off Switching Loss - 150 195 pd Vss = +15V, Rs = Ion, L = 200pH 11,13
Ema. Total Switching Loss - 315 410 T: = 125°C © WF1,WF2
tdion) Turn-On delay time - 19 25 Ic = 13A, Vcc = 390V on
t, Rise time - 6.0 8.0 ns Vss = +15V, Rs = Ion, L = 200pH 12,14
tdiott) Turn-Off delay time - 125 140 TI, = 125°C Ci) WF1,WF2
t, Fall time - 13 17
Cies Input Capacitance - 1560 - VGE = 0V 16
Goes Output Capacitance - 95 - Vcc = 30V
Cres Reverse Transfer Capacitance - 20 - pF f = 1Mhz
cu, eff. Effective Output Capacitance (Time Related) © - 83 - l/ss = 0V, Vcs = OV to 480V 15
cu, eff. (ER) Effective Output Capacitance (Energy Related) s - 61 -
TJ = 150°C, IC = 80A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE Vcc = 480V, Vp =600V CT2
Rg = 229, vGE = +15V to ov
t,, Diode Reverse Recovery Time - 28 42 ns TJ = 25°C IF: 4.0A, VF, = 200V, 19
- 38 57 T: = 125°C di/dt = 200A/ps
l Diode Reverse Recovery Charge - 40 60 nC TI, = 25°C IF = 4.0A, VR = 200V, 21
- 70 105 TJ = 125°C di/dt = 2OOA/ps
Ir, Peak Reverse Recovery Current - 2.9 5.2 A T: = 25°C v-- 4.0A, VR = 200V, 19,2021,22
- 3.7 6.7 T: = 125°C di/dt = 200A/ps CT5
Notes:
co RCE(on) typ. = equivalent on-resistance = VCEmn) typ. / lc, where VCE(on) typ. = 2.05V and k: = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
© Vcc = 80% (VCES)1VGE =15V, L = 28pH, RG = 220.
© Pulse width limited by max. junction temperature.
© Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
S Goes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% l/css.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
