IRGB15B60KDPBF ,600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package IRGB15B60KDPbFIRGS15B60KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDPbFULTRAFA ..
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IRGB15B60KDPBF-IRGS15B60KDPBF
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
PD - 95194A
International
‘5 fl r IRGB15B60KDPbF
TOR REC“ e IRGS15B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH lRGSL15B60KDPbF
ULTRAFAST SOFT RECOVERY DIODE
Features C VCES = 600V
. Low VCE (on) Non Punch Through IGBT
/ll,e,1r:1fll,g,yi, lc = 15A, Tc=100°0
. 10ps Short Circuit Capability. G
. Square RBSOA. tsc > 10ps, TJ=1500C
. [rJltrltoft Diode Reverse Recovery Characteristics. E
: EgzgmeretCE (on) Temperature Coefficient. n-channel VCE(on) typ. = 1 .8V
Benefits Ps T
. Benchmark Efficiency for Motor Control. , _itiiliri . 'ct
. Rugged Transient Performance. a 1‘ _ g
. Low EMI. . \\-..\-~
. Excellent Current Sharing in Parallel Operation.
TO-220AB D2Pak TO-262
IRGB15B60KDPbF IRGS15B60KDPbF FK3%1ay0q3Ftf
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
k; @ To = 25°C Continuous Collector Current 31
k; © To = 100°C Continuous Collector Current 15
ICM Pulsed Collector Current 62
ILM Clamped Inductive Load Current 69 62 A
I; @ To = 25°C Diode Continuous Forward Current 31
IF @ To = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 64
l/ss Gate-to-Emitter Voltage 1 20 V
PD © To = 25°C Maximum Power Dissipation 208 W
PD @ To = 100°C Maximum Power Dissipation 83
TJ Operating Junction and -55 to +150
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rea:: Junction-to-Case - IGBT - - 0.6
Roc Junction-to-Case - Diode - - 2.1
Recs Case-to-Sink, flat, greased surface - 0.50 - °CNV
RQJA Junction-to-Ambient, typical socket mountCD - - 62
RQJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
10/03/05
IRGB/S/SL15B60KDPbF
International
IEZR 'kyctifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
V(BR)css Collector-to-Emitter Breakdown Voltage 600 - - V Vas = 0V, k; = 500pA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.3 - V/°C Vas = 0V, k; = 1.0mA, (25°C-150°C)
Vcaon) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 k: = 15A, l/se = 15V 5, 6,7
- 2.05 2.50 V k: = 15A, VGE = 15V To = 125°C 9,10,11
- 2.10 2.60 lo =15A,VGE = 15V To = 150°C
VGE(1h) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = I/ss, Ic = 250pA 9,10,11
AVGEah/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = Vas, k; = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance - 10.6 - S VCE = 50V, k; = 20A, PW=80ps
ICES Zero Gate Voltage Collector Current -- 5.0 150 pA VGE = 0V, VCE = 600V
- 500 1000 Vse = OV, VCE = 600V, Tu = 150°C
VFM Diode Forward Voltage Drop - 1.20 1.45 IC = 15A 8
- 1.20 1.45 V lc = 15A TJ = 150°C
Kass Gate-to-Emitter Leakage Current - - :100 nA Vas = t20V
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
tug Total Gate Charge (turn-on) - 56 84 k; = 15A
Qge Gate - Emitter Charge (turn-on) - 7.0 10 nC Vcc = 400V CT1
ago Gate - Collector Charge (turn-on) - 26 39 V95 = 15V
Eon Turn-On Switching Loss - 220 330 pd IC = 15A, Vcc = 400V CT4
Eott Turn-Off Switching Loss - 340 455 Vas = 15V,RG = 229, L = 200pH
Em Total Switching Loss - 560 785 Ls = 150nH TJ = 25°C ©
tdmn) Turn-On Delay Time - 34 44 k; = 15A, Vcc = 400V
t, Rise Time - 16 22 Vas = 15V, Rs = 22Q, L = 200pH CT4
td(off) Turn-Off Delay Time --- 184 200 ns Ls = 150nH, Tu = 25°C
tf Fall Time - 2O 26
Eon Turn-On Switching Loss - 355 470 IC = 15A, Vcc = 400V CT4
Eott Turn-Off Switching Loss - 490 600 pd VGE = 15V,RG = 229, L = 200pH 13,15
Em Total Switching Loss - 835 1070 Ls = 150nH TJ = 150°C © WF1WF2
tdmn) Turn-On Delay Time - 34 44 k; = 15A, Vcc = 400V 14, 16
t, Rise Time - 18 25 V95 = 15V, Rs = 229, L = 200pH CT4
td(ott) Turn-Off Delay Time __- 203 226 ns Ls = 150nH, Tu = 150°C WF1
tt Fall Time - 28 36 WF2
Cies Input Capacitance - 850 - Vas = 0V
Coes Output Capacitance - 75 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 35 - f = 1.0MHz
. . Tu = 150°C, Io = 62A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE Vcc = 500V, Vas = +15V to OVRG = 229 CT2
. . . us TJ = 150°C, Vp =600V,RG = 229 CT3
SCSOA Short Circuit Safe Operting Area 10 - - Vcc = 360V, Vas = +15V to 0V WF4
Erec Reverse Recovery energy of the diode - 540 720 pJ Tu = 150°C 17,18,19
trr Diode Reverse Recovery time - 92 111 ns Vcc = 400V, IF = 15A, L = 200pH 20,21
In Diode Peak Reverse Recovery Current - 29 33 A l/cus = 15V,RG = 229, Ls = 150nH CT4,WF3
Note Ci) to G) are on page 15
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