IRGS15B60KD ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package IRGB15B60KDIRGS15B60KDINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL15B60KDULTRAFAST SOFT R ..
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IRGS30B60K ,600V UltraFast 10-30 kHz IGBT in a D2-Pak packageFeaturesI = 50A, T =100°CC C• Low VCE (on) Non Punch Through IGBT Technology.at T =175°CJ• 10µs Sho ..
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IRGS4B60K ,600V Low VCEon Copack IGBT in a D2Pak package IRGB4B60KIRGS4B60KINSULATED GATE BIPOLAR TRANSISTOR IRGSL4B60K
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ISP1181BBS ,ISP1181B; Full-speed Universal Serial Bus peripheral controller
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IRGB15B60KD-IRGS15B60KD-IRGSL15B60KD
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
International
PD - 94383C
TOR Rectifier IRGB15B60KD
I RGSI 51360 KD
INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL1 5BBOKD
ULTRAFAST SOFT RECOVERY DIODE
v = 600V
Featu res CES
. Low VCE (on) Non Punch Through IGBT Technology.
. Low Diode VF. k: = 15A, Tc=100oC
. 10ps Short Circuit Capability.
. Square RBSOA. G 0
. Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10ps, TJ=150 C
. Positive VCE (on) Temperature Coefhcient. E
Benefits n-channel VCE(on) typ. = 1.8V
. Benchmark Efrciency for Motor Control.
. Rugged Transient Performance. , tiii))
. Low EMI. RiCi, C1,
. Excellent Current Sharing in Parallel Operation. l.
TO-220AB D2Pak TO-262
. . IRGB15B60KD IRGS15B60KD IRGSL15B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 31
k: @ Tc = 100''C Continuous Collector Current 15
ICM Pulsed Collector Current 62
ILM Clamped Inductive Load Current 62 A
IF @ Tc = 25°C Diode Continuous Forward Current 31
IF @ Tc = 100°C Diode Continuous Forward Current 15
IFM Diode Maximum Forward Current 64
VGE Gate-to-Emitter Voltage , 20 V
PD @ Tc = 25°C Maximum Power Dissipation 208
Pro @ Tc = 100°C Maximum Power Dissipation 83
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
Rouc Junction-to-Case - IGBT - - 0.6
ReJC Junction-to-Case - Diode - - 2.1
Recs Case-to-Sink, flat, greased surface - 0.50 - ''C/W
' Junction-to-Ambient, typical socket mount0D - - 62
ReJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
6/24/02
|RG/B/S/SL15B60KD
Internationa
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
V(BR)CES Collector-to-Emi) Breakdown Voltage 600 - - V VGE = 0V, Ic = 500pA
AV
Vcaon) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 l: = 15A, VGE = 15V 5, 6,7
- 2.05 2.50 V Ic = 15A, Vss =15V To = 125°C 9,10,11
2.10 2.60 lc = 15A, VGE =15V To =150°C
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, lc = 250pA 9,10,11
AVGE(m)/ATJ Temperature Coeff. of Threshold Voltage - -10 -- mV/°C VCE = VGE, lc = 1.0mA, (25°C-150°C) 12
91s Forward Transconductance - 10.6 - S VCE = 50V, lc = 20A, PW=80ps
ICES Zero Gate Voltage Collector Current - 5.0 150 pA N/ss = 0V, VCE = 600V
- 500 1000 Vas = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.20 1.45 lc = 15A 8
- 1.20 1.45 V lc = 15A To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = EOV
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
09 Total Gate Charge (turn-on) - 56 84 Ic = 15A
Qge Gate - Emitter Charge (turn-on) - 7.0 10 nC Vcc = 400V CT1
Qgc Gate - Collector Charge (turn-on) - 26 39 VGE = 15V
Eon Turn-On Switching Loss - 220 330 pJ Ic = 15A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 340 455 VGE = 15V,RG = 229, L = 200pH
Etot Total Switching Loss - 560 785 Ls = 150nH To = 25°C ©
td(on) Turn-On Delay Time - 34 44 Ic = 15A, Vcc = 400V
tr Rise Time - 16 22 VGE = 15V, Rs = 229, L = 200pH CT4
tam) Turn-Off Delay Time - 184 200 ns Ls = 150nH, Tu = 25°C
tr Fall Time - 20 26
Eon Turn-On Switching Loss - 355 470 k: = 15A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 490 600 pJ VGE = 15V,RG = 229, L = 200pH 13,15
Etot Total Switching Loss - 835 1070 Ls = 150nH To = 150°C © WF1WF2
tdwn) Turn-On Delay Time - 34 44 Ic = 15A, Vcc = 400V 14, 16
t, Rise Time - 18 25 VGE = 15V, Rs = 229, L = 200pH CT4
tam) Turn-Off Delay Time - 203 226 ns Ls = 150nH, Tu = 150°C WF1
tr Fall Time - 28 36 WF2
Cies Input Capacitance - 850 - VGE = 0V
Coes Output Capacitance - 75 - pF Vcc = 30V
Ores Reverse Transfer Capacitance - 35 - f= 1.0MHz
' . TJ = 150°C, k: = 62A, Vp =600V 4
RBSOA Reverse Bias Safe Operting Area FULL SQUARE Vcc = 500V, VGE = +15Vto OVRG = 22n CT2
. . . ps To = 150°C, Vp =600V,RG = 22n CT3
SCSOA Short Circuit Safe Opening Area 10 - - Vcc = 360V, VGE = +15V to 0V WF4
Erec Reverse Recovery energy of the diode - 540 720 pJ T J = 150°C 17,18,19
trr Diode Reverse Recovery time - 92 111 ns Vcc = 400V, IF = 15A, L = 200pH 2021
In Diode Peak Reverse Recovery Current - 29 33 A VGE = 15V,RG = 229, Ls = 150nH CT4J/W3
Note (D to © are on page 15
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