IRGB10B60KDPBF ,600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package IRGB10B60KDPbFIRGS10B60KDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL10B60KDPbFULTRAFAS ..
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IRGB10B60KDPBF
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
International
TOR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
. Low VCE (on) Non Punch Through IGBT Technology.
. Low Diode VF.
. 10ps Short Circuit Capability.
. Square RBSOA.
. Ultrasoft Diode Reverse Recovery Characteristics.
. Positive VCE (on) Temperature Coefficient.
. Lead-Free
Benefits
. Benchmark Efficiency for Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
PD - 94925C
lRGB10B60KDPbF
lRGS10B60KDPbF
lRGSL10B60KDPbF
n-channel
VCES = 600V
IC = 19A, TC=100°C
tsc > 10ps, TJ=1500C
VCE(on) typ. = 1.8V
TO-220AB
lRGB10B60KDPbF
v V _ '. 's. _ . ..
tt "x. 'h “K: +
D2Pak TO-262
IRGS10B60KDPbF IRGSL10B60KDPbF
Parameter Max. Units
l/ces Collector-to-Eminer Voltage 600 V
Ic @ To = 25°C ContinuousCollectorCurrent 35
k: @ Tc = 100°C ContinuousCollectorCurrent 19
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current (4) 44 A
IF @ To = 25°C Diode Continuous ForwardCurrent 35
IF © To = 100°C DiodeContinuous ForwardCurrent 19
IFM Diode Maximum Forward Current 44
V95 Gate-to-Emitter Voltage 1 20 V
PD @ To = 25°C Maximum Power Dissipation 156 W
PD @ To = 100°C Maximum Power Dissipation 62
To Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
Rout, Junction-to-Case - IGBT - - 0.8
Rout, Junction-to-Case - Diode - - 3.4
Recs Case-to-Sink, flat, greased surface - 0.50 - "C/W
RQJA Junction-to-Ambient, typical socket mounk0 - - 62
ReJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight -- 1.44 - g
1
01/07/13
IlRG/B/S/SL10B60KDPbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, k; = 500pA
AV(BR)CE$/ATJ Temperature Coeff. of Breakdown Voltage - 0.3 - V/°C Vias = 0V, Ic = 1.0mA, (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 k: = 10A, VGE = 15V 5, 6,7
2.20 2.50 V IC = 10A, Vas = 15V TI, = 150°C 9,10,11
VGE(1h) Gate Threshold Voltage 3.5 4.5 5.5 V VCE = VGE, IC = 250pA 9,10,11
AVGEW/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/°C VCE = VGE, Is = 1.0mA, (25°C-150°C) 12
gfe Forward Transconductance - 7.0 - S Vcs = 50V, k; = 10A, PW=80ps
ICES Zero Gate Voltage Collector Current - 3.0 150 PA VGE = 0V, VCE = 600V
- 300 700 VGE = OV, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.30 1.45 k: = 10A 8
- 1.30 1.45 v lc=10A TJ=150°C
lass Gate-to-Emitter Leakage Current - - i100 nA VGE = t201/
Switching Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ret.Fig.
Qg Total Gate Charge (turn-on) - 38 - k: = 10A
Qge Gate - Emitter Charge (turn-on) - 4.3 - nC Vcc = 400V CT1
Qgc Gate - Collector Charge (turn-on) - 16.3 - VGE = 15V
Eon Turn-On Switching Loss - 140 247 pJ ls = 10A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 250 360 Vas = 15V,RG = 479, L = 200pH
Em, Total Switching Loss - 390 607 Ls = 150nH To = 25°C ©
tdwn) Turn-On Delay Time - 30 39 k: = 10A, Vcc = 400V
t, Rise Time - 20 29 VGE = 15V, Re = 479, L = 200pH CT4
td(off) Turn-Off Delay Time - 230 262 ns Ls = 150nH, Tu = 25°C
tt Fall Time - 23 32
Eon Turn-On Switching Loss - 230 340 k; = 10A, Vcc; = 400V CT4
Eott Turn-Off Switching Loss - 350 464 pd VGE = 15V,RG = 479, L = 200pH 13,15
Etot Total Switching Loss - 580 804 Ls = 150nH To = 150°C © WF1WF2
td(on) Turn-On Delay Time - 30 39 IC = 10A, Vcc = 400V 14, 16
tr Rise Time - 20 28 VGE = 15V, Re = 479, L = 200pH CT4
td(off) Turn-Off Delay Time - 250 274 ns Ls = 150nH, TJ = 150°C WF1
tf Fall Time - 26 34 WF2
Cies Input Capacitance - 620 - Vas = 0V
Coes Output Capacitance - 62 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 22 - f = 1.0MHz
RBSOA Reverse Bias Safe Opening Area FULL SQUARE :::::&3 t: '=1)'s)/ $026:22:= 479 il,
. . . us To = 150°C, Vp =600V,RG = 479 CT3
SCSOA Short Circuit Safe Opening Area 10 - - Vcc = 360V, l/ss = +15V to 0V WF4
Erec Reverse Recovery energy of the diode - 245 330 pJ To = 150°C 17,18,19
trr Diode Reverse Recovery time - 90 105 ns Vcc = 400V, IF = 10A, L = 200uH 20, 21
In Diode Peak Reverse Recovery Current - 19 22 A VGE = 15V,RG = 479, Ls = 150nH CT4,WF3
Note OD to (43 are on page 15
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