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IRGB10B60KD-IRGS10B60KD-IRGSL10B60KD
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
PD - 94382C
International
fti “her IRGB10B60KD
1:,5,'r.i,11llt,,cGt/ilit, BIPOLAR TRANSISTOR WITH IRGS1OB6OKD
ULTRAFAST SOFT RECOVERY DIODE 1RGSL10B60KD
Features C VCES = 600V
. Low VCE (on) Non Punch Through IGBT Technology.
. Low Diode VF. . ... lc = 12A, TC:100°C
. 10ps Short Circuit Capability.
. Square RBSOA. G
. Ultrasoft Diode Reverse Recovery Characteristics. tsc > 10ps, TJ=150°C
. Positive VCE (on) Temperature Coemcient. E
Benefits n-channel VCE(on) typ. = 1.8V
. Benchmark Efficiency tor Motor Control.
. Rugged Transient Performance.
. Low EMI.
. Excellent Current Sharing in Parallel Operation.
TO-220AB D2Pak TO-262
IRGB10B60KD lRGS10B60KD lRGSL10B60KD
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
Ic @ Tc = 25°C Continuous Collector Current 22
k: © Tc = 100''C Continuous Collector Current 12
ICM Pulsed Collector Current 44
ILM Clamped Inductive Load Current 44 A
IF @ To = 25°C Diode Continuous Forward Current 22
IF @ Tc = 100°C Diode Continuous Forward Current 10
IFM Diode Maximum Forward Current 44
l/GE Gate-to-Emitter Voltage * 20 V
Po @ Tc = 25°C Maximum Power Dissipation 156 W
Po @ TC = 100°C Maximum Power Dissipation 62
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
Raw; Junction-to-Case - IGBT - - 0.8
ReJC Junction-to-Case - Diode - - 3.4
Recs Case-to-Sink, flat, greased surface - 0.50 - "CA/V
ReJA Junction-to-Ambient, typical socket mountC0 - - 62
ReJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 1.44 - g
1
6/24/02
|RG/B/S/SL1OBGOKD
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 - - V VGE = 0V, Ic = 500pA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.3 - V/°C VGE = 0V, k: = 1.0mA, (25°C-150°C)
Vcaon) Collector-to-Emitter Saturation Voltage 1.5 1.80 2.20 k: = 10A, VGE = 15V 5, 6,7
- 2.20 2.50 V Ic =10A,VGE =15V To = 150°C 9,10,11
VGE(th) Gate Threshold Voltage 3.5 4.5 5.5 V VcE = VGE, lc = 250pA 9,10,11
AVGE(th)/ATJ Temperature Coeff. of Threshold Voltage - -10 - mV/''C VCE = VGE, lc = 1.0mA, (25°C-150°C) 12
9te Forward Transconductance - 7.0 - S ch = 50V, lc = 10A, PW=80ps
ICES Zero Gate Voltage Collector Current - 3.0 150 pA VGE = 0V, VCE = 600V
- 300 700 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.30 1.45 Ic = 10A 8
- 1.30 1.45 V lc = 10A To = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA VGE = EOV
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
09 Total Gate Charge (turn-on) - 38 - Ic = 10A
Qge Gate - Emitter Charge (turn-on) - 4.3 - nC Vcc = 400V CT1
Qgc Gate - Collector Charge (turn-on) - 16.3 - VGE = 15V
Eon Turn-On Switching Loss - 140 247 pJ k: = 10A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 250 360 VGE = 15V,RG = 479, L = 200pH
Etot Total Switching Loss - 390 607 Ls = 150nH TJ = 25°C ©
tam) Turn-On Delay Time - 30 39 Ic = 10A, Vcc = 400V
tr Rise Time - 20 29 VGE = 15V, Rs = 479, L = 200pH CT4
td(ott) Turn-Off Delay Time - 230 262 ns Ls = 150nH, To = 25''C
t, Fall Time - 23 32
Eon Turn-On Switching Loss - 230 340 Ic = 10A, Vcc = 400V CT4
Eoff Turn-Off Switching Loss - 350 464 pJ VGE = 15V,RG = 479, L = 200pH 13,15
Etot Total Switching Loss - 580 804 Ls = 150nH TJ = 150''C © \NF1WF2
tum”) Turn-On Delay Time - 30 39 IC = 10A, Vcc = 400V 14, 16
tr Rise Time - 20 28 V95 = 15V, Rs = 479, L = 200pH CT4
tum) Turn-Off Delay Time - 250 274 ns Ls = 150nH, To = 150°C WF1
tf Fall Time - 26 34 WF2
Cies Input Capacitance - 620 - VGE = 0V
Coes Output Capacitance - 62 - pF Vcc = 30V
Cres Reverse Transfer Capacitance - 22 - f= 1.0MHz
RBSOA Reverse Bias Safe Operting Area FULL SQUARE 1Ti',c==1if2j,ts:=44+/2/'t'o=3))3/= 479 cl,
. . . us TJ = 150°C, Vp =600V,RG = 479 CT3
SCSOA Short Circuit Safe Operting Area 10 - - Vcc = 360V, VGE = +15V to 0V WF4
Erec Reverse Recovery energy of the diode - 245 330 pJ To = 150°C 17,18,19
trr Diode Reverse Recovery time - 90 105 ns Vcc = 400V, IF = 10A, L = 200pH 20, 21
|rr Diode Peak Reverse Recovery Current - 19 22 A VGE = 15V,RG = 479, Ls = 150nH CT4WF3
Note OD to © are on page 15
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