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IRG7R313U
330V PDP Trench IGBT in a D-Pak package
PD - 97484
International
ISBR Rectifier IRG7lR313UPbF
PDP TRENCH IGBT
Features Key Parameters
. Advanced Trench IGBT Technology VCE min 330 V
q Optimized for Sustain and Energy Recovery VCE(ON) typ. © IC = 20A 1.35 V
circuits in PDP applications lm, max @ Tc-- 25°C 160 A
. Low VCEM) and Energy per Pulse (EPULSET'V') T max 150 CC
for improved panel efficiency J
. High repetitive peak current capability
. Lead Free package C C
i'siiii,)is)' E
E D-Pak
n-channel IRG7R313UPbF
Gate Collector Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBTtechnologyto achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vas Gate-to-emitter Voltage :30 V
lc @ TC = 25°C Continuous Collector Current, l/se @ 15V 40
lo @ TC = 100°C Continuous Collector, Var @ 15V 20 A
Irv, @ To = 25°C Repetitive Peak Current (D 160
PD @TC = 25°C Power Dissipation 78 W
PD @Tc = 100°C Power Dissipation 31
Linear Derating Factor 0.63 W/°C
TJ Operating Junction and -40 to + 150
Tsms Storage Temperature Range =
Soldering Temperature for 10 seconds 300
Thermal Resistance
Parameter Typ. Max. Units
R, JC Junction-to-Case © - 1.6 °C/W
1
3/31/10
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IRG7R313UPbF
International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVCES Collector-to-Emitter Breakdown Voltage 330 - - V Vss = 0V, ICE = 250pA
ABVCES/ATJ Breakdown Voltage Temp. Coefficient - 0.4 - V/°C Reference to 25°C, ICE = 1mA
- 1.21 1.45 VGE =15V.|CE =12A ©
- 1.35 - l/ss = 15V, ICE = 20A 6)
Vegan) Static Collector-to-Emitter Voltage 1.75 - V Vss = 15V, ICE = 40A Cl)
- 2.14 - Vss=15V,lcE=60A©
_ 1.41 - Vee = 15V, ICE = 20A, Tu = 150°C (3)
VGEnh) Gate Threshold Voltage 2.2 - 4.7 V VCE = Vas, ICE = 1.0mA
AVGEum/ATJ Gate Threshold Voltage Coefficient - -10 - mV/°C
Ices Collector-to-Emir Leakage Current - 1.0 10 VCE = 330V, Vas = 0V
25 150 PA VCE = 330V, VGE = 0V, Tu = 125°C
- 75 - vCE = 330v, Vas = OV, Tu = 150°C
lass Gate-to-Emitter Forward Leakage - - 100 nA I/ss = 30V
Gate-to-Emitter Reverse Leakage - - -100 Vss = -30V
gfe Forward Transconductance - 47 - S Vce = 25V, ICE = 12A
Q, Total Gate Charge - 33 - nC VCE = 240V, lc = 12A, VGE = 151/©
Qgc Gate-to-Collector Charge - 12 -
tdwn) Turn-On delay time - 1.0 - k; = 12A, Vcc = 196V
t, Rise time - 13 - ns Re =1OQ, L=210pH
td(ott) Turn-Off delay time - 65 - T, = 25°C
t, Fall time - 68 -
ton) Turn-On delay time - 11 - IC = 12A, Vcc = 196V
t, Rise time - 14 - ns Rs = 109, L=200pH, LS: 150nH
td(off) Turn-Off delay time - 86 - T, = 150°C
t, Fall time - 190 -
ts, Shoot Through Blocking Time 100 - - ns Vcc = 240V, Vas = 15V, Re: 5.1Q
L = 220nH, C= 0.20pF, Vas =15V
EPULSE Energy per Pulse - 480 - pJ Vcc = 240V, Ra-- 5.19, Tu = 25°C
L = 220nH, C= 0.20pF, vGE =15V
- 570 - Vcc = 240v, Ra-- 5.10, T, = 100°C
Class 1C
E SD Human Body Model (Per JEDEC standard JESD22-A114)
Machine Model Class B
(Per EIA/JEDEC standard ElA/JESD22-A115)
Cies Input Capacitance - 880 - Vss = 0V
Coes Output Capacitance - 47 - pF VcE = 30V
Cres Reverse Transfer Capacitance - 26 - f = 1.0MHz
LC Internal Collector Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
LE Internal Emitter Inductance - 7.5 - from package
and center of die contact
Notes:
0) Half sine wave with duty cycle = 0.05, ton=2psec.
© Ro is measured at T: of approximately 90°C.
© Pulse width S 400ps; duty cycle S 2%.
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